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| 型号： | TC4428EOA713 |
| 厂商： | Microchip Technology |
| 文件页数： | 3/20页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR 1.5A DUAL HS 8SOIC |
| 标准包装： | 3,300 |
| 配置： | 低端 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 20ns |
| 电流 - 峰： | 1.5A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
TC4426/TC4427/TC4428
1.0
ELECTRICAL
PIN FUNCTION TABLE
CHARACTERISTICS
Absolute Maximum Ratings ?
Supply Voltage ..................................................... +22V
Input Voltage, IN A or IN B
..................................... (V DD + 0.3V) to (GND – 5V)
Package Power Dissipation (T A ≤ 70°C)
DFN .............................................................. Note 3
MSOP .......................................................... 340 mW
PDIP ............................................................ 730 mW
SOIC............................................................ 470 mW
Name
NC
IN A
GND
IN B
OUT B
V DD
OUT A
NC
Function
No Connection
Input A
Ground
Input B
Output B
Supply Input
Output A
No Connection
Storage Temperature Range.............. -65°C to +150°C
Maximum Junction Temperature ...................... +150°C
? Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, T A = +25oC with 4.5V ≤ V DD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘ 1 ’, High Input Voltage
Logic ‘ 0 ’, Low Input Voltage
Input Current
V IH
V IL
I IN
2.4
—
-1.0
—
—
—
—
0.8
+1.0
V
V
μ A
Note 2
0V ≤ V IN ≤ V DD
Output
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Latch-Up Protection
V OH
V OL
R O
I PK
I REV
V DD – 0.025
—
—
—
—
—
—
7
1.5
> 0.5
—
0.025
10
—
—
V
V
Ω
A
A
DC Test
DC Test
I OUT = 10 mA, V DD = 18V
V DD = 18V
Duty cycle ≤ 2%, t ≤ 300 μ s
Withstand Reverse Current
Switching Time (Note 1)
V DD = 18V
Rise Time
Fall Time
Delay Time
Delay Time
t R
t F
t D1
t D2
—
—
—
—
19
19
20
40
30
30
30
50
ns
ns
ns
ns
Figure 4-1
Figure 4-1
Figure 4-1
Figure 4-1
Power Supply
Power Supply Current
I S
—
—
4.5
mA
V IN = 3V (Both inputs)
—
—
0.4
V IN = 0V (Both inputs)
Note 1:
2:
3:
Switching times ensured by design.
For V temperature range devices, the V IH (Min) limit is 2.0V.
Package power dissipation is dependent on the copper pad area on the PCB.
? 2006 Microchip Technology Inc.
DS21422D-page 3
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