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参数资料
| 型号： | TC4429EPA |
| 厂商： | Microchip Technology |
| 文件页数： | 5/20页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER 6A INV 8DIP |
| 标准包装： | 60 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 55ns |
| 电流 - 峰： | 6A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-PDIP |
| 包装： | 管件 |
TC4420/TC4429
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, T A = +25°C with 4.5V ≤ V DD ≤ 18V.
120
100
100
80
60
C L = 10,000 pF
80
60
C L = 10,000 pF
40
20
C L = 4700 pF
C L = 2200 pF
40
20
C L = 4700 pF
C L = 2200 pF
0
5
7
9
11
13
15
0
5
7
9
11
13
15
Supply Voltage (V)
Supply Voltage (V)
FIGURE 2-1:
Voltage.
100
80
60
40
Rise Time vs. Supply
V DD = 5V
FIGURE 2-4:
Voltage.
100
80
60
40
Fall Time vs. Supply
V DD = 5V
20
10
1000
V DD = 12V
V DD = 18V
10,000
20
10
1000
V DD = 12V
V DD = 18V
10,000
Capcitive Load (pF)
Capacitive Load (pF)
FIGURE 2-2:
Rise Time vs. Capacitive
FIGURE 2-5:
Fall Time vs. Capacitive
Load.
50
C L = 2200 pF
Load.
84
V DD = 15V
40
30
20
V DD = 18V
t D2
t D1
70
56
42
28
500 kHz
10
14
200 kHz
20 kHz
0
–60
–20
20 60
100
140
0
0
100 1000
10,000
TA (°C)
Capacitive Load (pF)
FIGURE 2-3:
Propagation Delay Time vs.
FIGURE 2-6:
Supply Current vs.
Temperature.
? 2004 Microchip Technology Inc.
Capacitive Load.
DS21419C-page 5
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