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| 型号： | TC4452VPA |
| 厂商： | Microchip Technology |
| 文件页数： | 6/26页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR 12A HS 8DIP |
| 标准包装： | 60 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 44ns |
| 电流 - 峰： | 13A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-PDIP |
| 包装： | 管件 |
| 产品目录页面： | 671 (CN2011-ZH PDF) |
TC4451/TC4452
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, T A = +25°C with 4.5V ? V DD ? 18V.
220
300
200
180
160
140
120
100
80
60
40
47,000 pF
22,000 pF
250
200
150
100
50
5V
10V
18V
20
0
10,000 pF
0
4
6
8
10
12
14
16
18
100
1000
10000
100000
Supply Voltage (V)
Capacitive Load (pF)
FIGURE 2-1:
Voltage.
300
Rise Time vs. Supply
FIGURE 2-4:
Load.
40
Fall Time vs. Capacitive
V DD = 18V
250
200
5V
30
t RISE
t FALL
10V
150
100
20
50
0
18V
10
0
100
1000
10000
100000
-40 -25 -10
5
20 35 50 65 80 95 110 125
Capacitive Load (pF)
Temperature (°C)
FIGURE 2-2:
Rise Time vs. Capacitive
FIGURE 2-5:
Rise and Fall Times vs.
10 -7
Load.
220
200
180
160
140
47,000 pF
Temperature.
1E-07
10 -8
120
100
80
60
40
20
0
22,000 pF
10,000 pF
1E-08
1E-09
4
6
8
10 12 14
16
18
4
6
8
10
12
14
16
18
Supply Voltage (V)
Supply Voltage (V)
FIGURE 2-3:
Fall Time vs. Supply
FIGURE 2-6:
Crossover Energy vs.
Voltage.
DS21987B-page 6
Supply Voltage.
? 2006-2012 Microchip Technology Inc.
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