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参数资料
| 型号： | TC4467EJD |
| 厂商： | Microchip Technology |
| 文件页数： | 5/22页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR QUAD NAND 14CDIP |
| 标准包装： | 29 |
| 配置： | 低端 |
| 输入类型： | 与非 |
| 延迟时间： | 40ns |
| 电流 - 峰： | 1.2A |
| 配置数： | 4 |
| 输出数： | 4 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 14-CDIP（0.300"，7.62mm） |
| 供应商设备封装： | 14-CERDIP |
| 包装： | 管件 |
TC4467/TC4468/TC4469
2.0
Note:
Note:
140
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
T A = +25°C, with 4.5 V ≤ V DD ≤ 18 V.
140
120
2200 pF
120 2200 pF
100
80
60
40
20
1600 pF
1000 pF
470 pF
100 pF
100
80
60
40
20
1500 pF
1000 pF
470 pF
100 pF
0
3
5
7
9
11
13
15
17
19
0
3
5
7
9
11
13
15
17
19
V SUPPLY (V)
V SUPPLY (V)
FIGURE 2-1:
Voltage.
140
120
100
80
60
40
20
Rise Time vs. Supply
5 V
10 V
15 V
FIGURE 2-4:
Voltage.
140
120
100
80
60
40
20
Fall Time vs. Supply
5 V
10 V
15 V
0
100
1000
10,000
0
100
1000
10,000
C LOAD (pF)
C LOAD (pF)
FIGURE 2-2:
Load.
25
Rise Time vs. Capacitive
FIGURE 2-5:
Load.
80
Fall Time vs. Capacitive
20
15
V SUPPLY = 17.5 V
C LOAD = 470 pF
t FALL
t RISE
60
40
C LOAD = 470 pF
t D1
10
5
20
t D2
0
-50
-25
0
25
50
75
100
125
0
4
6
8
10
12
14
16
18
TEMPERATURE ( ° C)
V SUPPLY (V)
FIGURE 2-3:
Rise/Fall Times vs.
FIGURE 2-6:
Propagation Delay Time vs.
Temperature.
? 2002 Microchip Technology Inc.
Supply Voltage.
DS21425B-page 5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TC4467EOE | 功能描述:功率驱动器IC 1.2A Quad NAND I/P RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4467EOE | 制造商:Microchip Technology Inc 功能描述:IC MOSFET DRVR SOIC16 |
| TC4467EPD | 功能描述:功率驱动器IC 1.2A Quad NAND I/P RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4467MJD | 功能描述:功率驱动器IC 1.2A Quad NAND I/P RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4468 | 制造商:TELCOM 制造商全称:TelCom Semiconductor, Inc 功能描述:LOGIC-INPUT CMOS QUAD DRIVERS |
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