参数资料
型号: TC4469COE
厂商: Microchip Technology
文件页数: 5/22页
文件大小: 0K
描述: IC MOSFET DVR AND/INV 16SOIC
标准包装: 47
配置: 低端
输入类型: 反相和非反相
延迟时间: 40ns
电流 - 峰: 1.2A
配置数: 4
输出数: 4
电源电压: 4.5 V ~ 18 V
工作温度: 0°C ~ 70°C
安装类型: 表面贴装
封装/外壳: 16-SOIC(0.295",7.50mm 宽)
供应商设备封装: 16-SOIC
包装: 管件
产品目录页面: 671 (CN2011-ZH PDF)
TC4467/TC4468/TC4469
2.0
Note:
Note:
140
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
T A = +25°C, with 4.5 V ≤ V DD ≤ 18 V.
140
120
2200 pF
120 2200 pF
100
80
60
40
20
1600 pF
1000 pF
470 pF
100 pF
100
80
60
40
20
1500 pF
1000 pF
470 pF
100 pF
0
3
5
7
9
11
13
15
17
19
0
3
5
7
9
11
13
15
17
19
V SUPPLY (V)
V SUPPLY (V)
FIGURE 2-1:
Voltage.
140
120
100
80
60
40
20
Rise Time vs. Supply
5 V
10 V
15 V
FIGURE 2-4:
Voltage.
140
120
100
80
60
40
20
Fall Time vs. Supply
5 V
10 V
15 V
0
100
1000
10,000
0
100
1000
10,000
C LOAD (pF)
C LOAD (pF)
FIGURE 2-2:
Load.
25
Rise Time vs. Capacitive
FIGURE 2-5:
Load.
80
Fall Time vs. Capacitive
20
15
V SUPPLY = 17.5 V
C LOAD = 470 pF
t FALL
t RISE
60
40
C LOAD = 470 pF
t D1
10
5
20
t D2
0
-50
-25
0
25
50
75
100
125
0
4
6
8
10
12
14
16
18
TEMPERATURE ( ° C)
V SUPPLY (V)
FIGURE 2-3:
Rise/Fall Times vs.
FIGURE 2-6:
Propagation Delay Time vs.
Temperature.
? 2002 Microchip Technology Inc.
Supply Voltage.
DS21425B-page 5
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