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| 型号： | TC573302ECTTR |
| 元件分类： | 模拟信号调理 |
| 英文描述： | SPECIALTY ANALOG CIRCUIT, PDSO5 |
| 封装： | SOT-23A, 5 PIN |
| 文件页数： | 11/16页 |
| 文件大小： | 462K |
| 代理商： | TC573302ECTTR |
TC57
DS21437B-page 4
2002 Microchip Technology Inc.
3.0
DETAILED DESCRIPTION
The TC57 series of precision low dropout regulator
controllers
use
an
external
PNP
transistor
to
accommodate a wide range of output currents. A series
resistor (RB) limits the maximum base current drawn
from the PNP transistor. Limiting the base drive both
determines the regulator’s output current capability, as
well as limits ground current when the device is
operated in dropout. The PNP transistor’s VCE(SAT) is
the only factor limiting dropout voltage.
FIGURE 3-1:
TEST CIRCUIT
3.1
Transistor Selection
The PNP pass transistor must have satisfactory power
dissipation, current gain, and collector current specifi-
cations to suit the application at hand. The maximum
output current the circuit can deliver is influenced by
hFE. The highest guaranteed output current is given by:
EQUATION 3-1:
The transistor’s actual power dissipation (PD) is equal
to the maximum load current times the maximum input/
output voltage differential, or:
EQUATION 3-2:
The ideal transistor has a minimum hFE of 100, and a
VCE(SAT) of less than 0.6V at full output current. For
example, the Zetex FZT749 has an hFE of 170 at a
collector current of 1A, and a guaranteed VCE(SAT) of
0.3V at a base current of 100mA. It is packaged in a
SOT-223 and is recommended for use with the TC57.
Other transistors are also suitable, depending on the
required input and output voltages and output current
(Table 3-1).
3.2
Base-Current Limiting Resistor
Base current limiting resistor RB canbeestimated
using:
EQUATION 3-3:
Where:
hFE is the current gain of the pass transistor
VIN Is the input voltage (in volts)
VBE is the base-emitter voltage at the desired
output current (in volts)
IOUT is the output current (in Amps)
For example, assume a desired continuous output
current of 1.0A, an input voltage of 5V, and an FZT749
pass transistor. The FZT749 has a typical hFE of 170,
and a VBE of 0.8V; both specified at a collector current
of 1.0A. Substituting these values into the equation
above results in an RB value of 704 (closest standard
value = 680
).
3.3
Pull-Up Resistor and Output
Capacitor
A pull-up resistor (RBE, installed between the base and
emitter of the pass transistor) facilitates rapid turn-off of
the pass transistor in the event of a sudden decrease in
load (Figure 3-2). Recommended values for this
resistor are between 20K
and 47K. A Tantalum
output capacitor of at least 10
Fmust beusedto
guarantee stability. Higher values decrease output
noise and eliminate power-on overshoot, but extend
power-up times. Table 3-1 lists several capacitor
choices.
FIGURE 3-2:
3.3V, 1A REGULATOR
USING 5V SUPPLY INPUT
TC573002ECT
VOUT
GND
SHDN
VIN
EXT
CIN
10F
(Tantalum)
FZT749
Q1
RB
680
CL
10
F
(Tantalum)
RL
VIN
RBE
33K
1
2
ON
OFF
3
4
5
VOUT
ILOAD(MAX) =25mA x hFE(MIN)
PD ≈ ILOAD(MAX) x(VIN(MAX) –VOUT(MIN))
hFE (VIN –VBE)
IOUT
RB =
TC57
VOUT
SHDN
VIN
EXT
CIN
10F
(Tantalum)
FZT749
Q1
RB
680
COUT
10
F
(Tantalum)
VIN = 5V
RBE
33K
1
2
ON
OFF
3
4
5
VOUT = 3.3V
GND
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