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参数资料
| 型号： | TC6501P095VCTRT |
| 厂商： | Microchip Technology |
| 文件页数： | 2/17页 |
| 文件大小： | 0K |
| 描述： | IC TEMP SWTCH OPEN DRAIN SOT23A5 |
| 标准包装： | 3,000 |
| 感应温度： | 95°C 分界点 |
| 输出类型： | 低态有效/开漏极 |
| 电源电压： | 2.7 V ~ 5.5 V |
| 精确度： | ±0.5°C |
| 封装/外壳： | SC-74A，SOT-753 |
| 供应商设备封装： | SOT-23-5 |
| 包装： | 带卷 (TR) |
TC6501/2/3/4
1.0
ELECTRICAL
CHARACTERISTICS
* Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
Absolute Maximum Ratings*
Supply Voltage (V CC ) .............................. -0.3V to +7V
Input Current (All Pins).......................................20 mA
Output Current (All Pins) ....................................20 mA
the device at these or any other conditions above those
indicated in the operational sections of the specifica-
tions is not implied. Exposure to maximum rating con-
ditions for extended periods may affect device
reliability.
Operating Temperature Range.......... - 55°C to +135°C
Storage Temperature Range ............. - 65°C to +165°C
T OVER (TC6501)....................................... -0.3V to +7V
T OVER (TC6502)......................... -0.3V to (V CC + 0.3V)
T UNDER (TC6503)....................................... -0.3V to 7V
T UNDER (TC6504)....................... -0.3V to (V CC + 0.3V)
All Other Pins ............................. -0.3V to (V CC + 0.3V)
Maximum Junction Temperature, T J .................. 150°C
Power Dissipation (T A = +70°C):
(Derate 7.1 mW/°C Above +70°C) ...............570 mW
ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise noted, V CC = +2.7V to +5.5V, R PULL-UP = 100 k ? ( TC6501/TC6503 only), 100 pF
decoupling capacitor from V CC to GND, T AMB = -55°C to +135°C. Typical values are at T A = +25°C.
Parameter
Supply Voltage Range
Supply Current
HYST Input Threshold
HYST Input Threshold
Temperature Threshold Accuracy (Note 1)
Temperature Threshold Hysteresis
Output Voltage High
Output Voltage Low
Open-Drain Output Leakage Current
Symbol
V CC
I CC
V IH
V IL
? T TH
T HYST
V OH
V OL
Min
2.7
—
0.8 x V CC
—
-6
-4
-4
-6
—
—
0.8 x V CC
V CC - 1.5
—
—
—
Typ
—
17
—
—
±0.5
±0.5
±0.5
±0.5
2.0
10
—
—
—
—
10
Max
5.5
40
—
0.2 x V CC
6
4
4
6
—
—
—
—
0.3
0.4
—
Unit
V
μA
V
V
°C
°C
°C
°C
°C
°C
V
V
V
V
nA
Test Conditions
-45°C to -25°C
-15°C to +15°C
+35°C to +65°C
+75°C to +125°C
HYST = GND
HYST = V CC
I SOURCE = 500 μA, V CC > 2.7V
( TC6502/TC6504 Only)
I SOURCE = 800 μA, V CC > 4.5V
( TC6502/TC6504 Only)
I SINK = 1.2 mA, V CC > 2.7V
I SINK = 3.2 mA, V CC > 4.5V
V CC = 2.7V, T UNDER = 5.5V
( TC6503 ); T OVER = 5.5V
( TC6501 )
Note 1: The TC6501/2/3/4 are available with internal, factory-programmed temperature trip thresholds from -45°C to +125°C, in
+10°C increments.
DS21451D-page 2
? 2004 Microchip Technology Inc.
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