参数资料
型号: TCM810ZVNB713
厂商: Microchip Technology
文件页数: 2/16页
文件大小: 0K
描述: IC RESET MONITOR 2.32V SOT23B
标准包装: 1
类型: 简单复位/加电复位
监视电压数目: 1
输出: 推挽式,图腾柱
复位: 高有效
复位超时: 最小为 140 ms
电压 - 阀值: 2.32V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23-3
包装: 标准包装
产品目录页面: 662 (CN2011-ZH PDF)
其它名称: TCM810ZVNB713DKR
TCM809/TCM810
1.0
ELECTRICAL
CHARACTERISTICS
? Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
Absolute Maximum Ratings?
Supply Voltage (V DD to GND) ........................................................6.0V
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
RESET, RESET ................................................... -0.3V to (V DD +0.3V)
Input Current, V DD .......................................................................20 mA
Output Current, RESET, RESET.................................................20 mA
dV/dt (V DD )........................................................................... 100V/μsec
Operating Temperature Range ...................................-40°C to +125°C
Power Dissipation (T A = 70°C):
3-Pin SOT-23B (derate 4 mW/°C above +70°C) ....................320 mW
3-Pin SC-70 (derate 2.17 mW/°C above +70°C)....................174 mW
Storage Temperature Range .......................................-65°C to +150°C
Maximum Junction Temperature, T J ............................................ 150°C
ELECTRICAL CHARACTERISTICS
V DD = Full Range, T A = Operating Temperature Range, unless otherwise noted. Typical values are at T A = +25°C,
V DD = 5V for L/M/J, 3.3V for T/S, 3.0V for R and 2.5V for Z (Note 1) .
Parameter
V DD Range
Sym
Min
1.0
Typ
Max
5.5
Units
V
Test Conditions
T A = 0°C to +70°C
1.2
5.5
T A = – 40°C to +125°C
Supply Current
I CC
12
30
μA
TCM8xx L/M/J:
V DD < 5.5V
9
25
TCM8xx R/S/T/Z:
V DD < 3.6V
Reset Threshold (Note 2)
V TH
4.56
4.63
4.70
V
TCM8xx L:
T A = +25°C
4.50
4.75
T A = – 40°C to +125°C
Reset Threshold Tempco
4.31
4.25
3.93
3.89
3.04
3.00
2.89
2.85
2.59
2.55
2.28
2.25
4.38
4.00
3.08
2.93
2.63
2.32
30
4.45
4.50
4.06
4.10
3.11
3.15
2.96
3.00
2.66
2.70
2.35
2.38
V
V
V
V
V
V
V
V
V
V
V
V
ppm/°C
TCM8xx M:
TCM809 J:
TCM8xx T:
TCM8xx S:
TCM8xx R:
TCM8xx Z:
T A = +25°C
T A = – 40°C to +125°C
T A = +25°C
T A = – 40°C to +125°C
T A = +25°C
T A = – 40°C to +125°C
T A = +25°C
T A = – 40°C to +125°C
T A = +25°C
T A = – 40°C to +125°C
T A = +25°C
T A = – 40°C to +125°C
V DD to Reset Delay,
Reset Active Time Out
140
65
320
560
μsec
msec
V DD = V TH to (V TH – 100 mV) (Note 2)
Period
RESET Output Voltage
Low ( TCM809 )
V OL
0.3
0.4
V
TCM809 R/S/T/Z:
TCM809 L/M/J:
V DD = V TH min, I SINK = 1.2 mA
V DD = V TH min, I SINK = 3.2 mA
0.3
V DD > 1.0V, I SINK = 50 μA
RESET Output Voltage
High ( TCM809 )
RESET Output Voltage
Low ( TCM810 )
RESET Output Voltage
V OH
V OL
V OH
0.8 V DD
V DD – 1.5
0.8 V DD
0.3
0.4
V
V
V
TCM809 R/S/T/Z: V DD > V TH max, I SOURCE = 500 μA
TCM809 L/M/J: V DD > V TH max, I SOURCE = 800 μA
TCM810 R/S/T/Z:V DD = V TH max, I SINK = 1.2 mA
TCM810 L/M:
V DD = V TH max, I SINK = 3.2 mA
1.8 < V DD < V TH min, I SOURCE = 150 μA
High ( TCM810 )
Note 1: Production testing done at T A = +25°C, overtemperature limits ensured by QC screen.
2: RESET output for TCM809 , RESET output for TCM810 .
DS21661D-page 2
? 2005 Microchip Technology Inc.
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