参数资料
型号: TEA0675T-T
厂商: NXP SEMICONDUCTORS
元件分类: 噪声抑制
英文描述: B Type, DOLBY NOISE REDUCTION IC, PDSO24
封装: 7.50 MM, PLASTIC, MS-013AD, SOT-137-1, SOP-24
文件页数: 4/32页
文件大小: 225K
代理商: TEA0675T-T
1996 Jun 07
12
Philips Semiconductors
Preliminary specication
Dual Dolby* B-type noise reduction circuit
for playback applications
TEA0675
Description of the principle timing diagram for AMS-scan mode with initial input signal (see Fig.6)
Fig.6 AMS-scan mode with initial input signal.
handbook, full pagewidth
MED626
output signal
to microprocessor
4.5 V
VAMSEQ
time threshold
upper threshold
(hysteresis)
Vt
VREF
level threshold
Vl
Vin
tr: rise time
td: delay time
tb: burst time
tp: pause time
tf: fall time
Vl: voltage at
level detector
input
pin 3 (CONTRA)
Vt: voltage at
time detector
input
pin 22 (CONTRB)
t
AMS on
td
tf
tb<tr
tp<tr
t0 t1
t5 t6
t7 t8 t9 t10
t11 t12
t13 t14
t15
At t0 the AMS-scan mode is activated. With an input signal
at Vin, the following initial procedure runs until the circuit
gets a steady state status.
Due to the signal at Vin the voltage at the level detector
input VI (pin 3, CONTRA) slides to a value which is defined
by a limiter. This voltage causes the level detector output
charging the second time constant (time detector input Vt)
to its maximum voltage level at t1. Now the initial
procedure is completed.
The following behaviour does not differ from the
description in Section “Description of the principle timing
diagram for AMS-scan mode without initial input signal
(see Fig.5)”.
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