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| 型号： | TEA1795T/N1 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 稳压器 |
| 英文描述： | SWITCHING CONTROLLER, 500 kHz SWITCHING FREQ-MAX, PDSO8 |
| 封装： | 3.90 MM, PLASTIC, MS-012, SOT96-1, SOP-8 |
| 文件页数： | 9/14页 |
| 文件大小： | 134K |
| 代理商： | TEA1795T/N1 |
TEA1795T
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 4 November 2010
4 of 14
NXP Semiconductors
TEA1795T
GreenChip synchronous rectifier controller
7.2 Start-up and UnderVoltage LockOut (UVLO)
The IC leaves the UVLO state and activates the synchronous rectifier circuitry when the
voltage on the VCC pin is above Vstartup (8.5 V typical). When the voltage drops below
8.0 V (typical), the UVLO state is reentered and the SR MOSFET gate driver outputs are
actively kept low.
7.3 Supply management
All (internal) reference voltages are derived from a temperature compensated, on-chip
band gap circuit.
7.4 Synchronous rectification (DSA, SSA, DSB and SSB pins)
The voltages present between the drain and source terminals of the SR MOSFETs are
used to derive the timing for the gate drive signal. The IC senses the voltage difference
between the drain sense (pins DSA and DSB) and the source sense (pins SSA and SSB)
connections. When this voltage difference is lower than Vact(drv) (220 mV typical), the
corresponding gate driver output voltage is driven high and the external SR MOSFET is
switched on.
When the external SR MOSFET is switched on, the input signals on the drain sense pins
and source sense pins are ignored during the minimum synchronous rectification active
time (tact(sr)(min), 520 ns typical). This minimizes false switch-off due to the sensing of high
frequency ringing signals at the start of the conduction phase.
Once this minimum synchronous rectification active time has ended, the IC monitors the
difference between the drain sense inputs and the source sense inputs. When the
difference is higher than Vreg(drv) (25 mV typical), the gate driver output voltage is
regulated to maintain this
25 mV difference between the drain sense pins and the source
sense pins. As a result, the SR MOSFET can be switched off quickly when the current
through the external SR MOSFET reaches zero.
Fig 3.
TEA1795T: typical configuration
001aal797
DSA
GDA
SSA
DSB
VCC
GDB
SSB
GND
Qprim1
CHB
RDRNSENSE1
Qprim2
Qsec1
PRIMARY
SIDE
CONTROLLER
TEA1795T
Vin
Vout
TR
IC1
RDRNSENSE2
Qsec2
Cout
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