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参数资料
| 型号： | TEMT1020 |
| 厂商： | Vishay Intertechnology,Inc. |
| 元件分类： | 光发射/接收器 |
| 英文描述： | Silicon Phototransistor |
| 中文描述： | 硅光电晶体管 |
| 文件页数： | 1/9页 |
| 文件大小： | 355K |
| 代理商： | TEMT1020 |
TEMT1000 / 1020 / 1030 / 1040
Document Number 81554
Rev. 1.5, 08-Mar-05
Vishay Semiconductors
www.vishay.com
1
16757
TEMT1000
TEMT1030
TEMT1040
TEMT1020
Silicon Phototransistor
Description
TEMT1000 series are high speed and high sensitive
silicon NPN epitaxial planar phototransistors in SMD
package with dome lens. Due to integrated Daylight
filter devices are sensitive for IR radiation only.
Features
High photo sensitivity
Fast response times
Angle of half sensitivity
= ± 15°
Daylight filter matched to IR Emitters
(
λ
= 870 nm to 950 nm)
Versatile terminal configurations
Matched IR Emitter series: TSML1000
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Detector in electronic control and drive circuits
IR Detector for Daylight application
Photo interrupters
Counter
Encoder
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Emitter Collector Voltage
Basic Characteristics
T
amb
= 25 °C, unless otherwise specified
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector Emitter Voltage
Test condition
Symbol
V
ECO
I
C
I
CM
P
tot
T
j
T
stg
T
amb
T
sd
R
thJA
Value
5
Unit
V
Collector current
50
mA
Collector peak current
t
p
/T = 0.5, t
p
≤
10 ms
T
amb
≤
55 °C
100
mA
Total Power Dissipation
100
mW
Junction Temperature
100
°C
Storage Temperature Range
- 40 to + 100
°C
Operating Temperature Range
- 40 to + 85
°C
Soldering Temperature
t
≤
5 s
< 260
°C
Thermal Resistance Junction/
Ambient
400
K/W
Test condition
Symbol
V
CEO
I
CEO
C
CEO
λ
p
Min
70
Typ.
Max
Unit
V
I
C
= 1 mA
V
CE
= 20 V, E = 0
V
CE
= 5 V, f = 1 MHz, E = 0
Collector-emitter dark current
1
200
nA
Collector-emitter capacitance
3
pF
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
±15
950
deg
nm
相关PDF资料 |
PDF描述 |
|---|---|
| TEMT1030 | Silicon Phototransistor |
| TEMT1040 | Silicon Phototransistor |
| TEMT3700 | Silicon NPN Phototransistor |
| TEMT4700 | Silicon NPN Phototransistor |
| TEMT4700 | Silicon NPN Phototransistor(快速响应的高速外延平面型NPN光晶体管) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TEMT1020 | 制造商:Vishay Semiconductors 功能描述:Optical Sensor (Photodetector - "NPN") P |
| TEMT1030 | 功能描述:光电晶体管 5V 100mW 880nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| TEMT1030 | 制造商:Vishay Semiconductors 功能描述:Optical Sensor (Photodetector - "NPN") P |
| TEMT1040 | 功能描述:光电晶体管 5V 100mW 880nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| TEMT1520 | 功能描述:光电晶体管 5V 100mW 850nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
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