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参数资料
| 型号： | TEMT3700 |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Phototransistor |
| 中文描述： | 硅npn型光电晶体管 |
| 文件页数： | 2/5页 |
| 文件大小： | 68K |
| 代理商： | TEMT3700 |
TEMT3700
Vishay Telefunken
2 (5)
Rev. 1, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81555
Basic Characteristics
T
amb
= 25 C
Parameter
Collector Emitter Breakdown
Voltage
Collector Dark Current
Collector Emitter Capacitance
Collector Light Current
Test Conditions
I
C
= 1 mA
Symbol
V
(BR)CE
O
I
CEO
C
CEO
I
ca
Min
70
Typ
Max
Unit
V
V
CE
= 20 V, E = 0
V
CE
= 5 V, f = 1 MHz, E=0
E
e
= 1 mW/cm
2
,
= 950 nm, V
CE
= 5 V
1
3
200
nA
pF
mA
0.25
0.5
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Rise Time / Fall Time
±
60
830
deg
nm
nm
V
p
0.5
620...980
0.15
E
e
= 1 mW/cm
2
,
= 950 nm, I
C
= 0.1 mA
V
S
= 5 V, I
C
= 1 mA,
= 950 nm, R
L
= 1 k
V
S
= 5 V, I
C
= 1 mA,
= 950 nm, R
L
= 100
V
S
= 5 V, I
C
= 2 mA,
R
L
= 100
V
CEsat
0.3
t
r
/ t
f
6
s
t
r
/ t
f
2
s
Cut–Off Frequency
f
c
180
kHz
Typical Characteristics
(T
amb
= 25 C unless otherwise specified)
0
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
0
25
50
75
100
125
P
t
100
94 8308
R
thJA
Figure 1. Total Power Dissipation vs.
Ambient Temperature
94 8304
20
I
C
100
40
60
80
T
amb
– Ambient Temperature (
°
C )
10
0
10
1
10
2
10
3
10
4
V
CE
=20V
Figure 2. Collector Dark Current vs. Ambient Temperature
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TEMT3700 | 制造商:Vishay Semiconductors 功能描述:Optical Sensor (Photodetector - "NPN") P |
| TEMT3700_08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Silicon NPN Phototransistor, RoHS Compliant |
| TEMT3700F-GS08 | 功能描述:光电晶体管 70V 100mW 850nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| TEMT3700-GS08 | 功能描述:光电晶体管 60 Degree 160mW RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| TEMT3700-GS18 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Silicon NPN Phototransistor, RoHS Compliant |
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