参数资料
型号: TFMAJ110C
厂商: RECTRON LTD
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
封装: PLASTIC PACKAGE-2
文件页数: 2/6页
文件大小: 402K
代理商: TFMAJ110C
RATING AND CHARACTERISTIC CURVES ( TFMAJ5.0 THRU TFMAJ170CA )
FIG. 2 - PULSE DERATING CURVE
P
E
A
K
P
U
LS
E
P
O
W
E
R
(P
P
)
O
R
C
U
R
E
N
T
TA, AMBIENT TEMPERATURE,(
)
0
25
50
75
100 125 150 175 200
1.00
.75
.50
.25
0
(I
P
)
D
E
R
AT
IN
G
IN
P
E
R
C
E
N
TA
G
E
,%
Measured at
Zero Bias
Measured at
Stand off
Voltage,VWM
f = 1.0 MHz
Vsig = 50mVp-p
TJ = 25
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
C
J,
C
A
PA
C
IT
A
N
C
E
,p
F
V(BR), BREAKDOWN VOLTACE, VOLTS
1.0
10
100 200
10000
1000
100
10
Pulse Width (td) is Defined
as the Point Where the Peak
Current Decays to 50% of IPPM
10/1000usec. Waveform
as Defined by R.E.A.
Peak Value
IPPM
tr = 10usec.
FIG. 3 - PULSE WAVEFORM
IP
P
M
,P
E
A
K
P
U
LS
E
C
U
R
E
N
T,
%
t, TIME,mS
0
1.0
2.0
3.0
4.0
50
100
150
HALF VALUE -IPPM
2
td
FIG. 1 - PEAK PULSE POWER RATING CURVE
P
M
,P
E
A
K
P
U
LS
E
P
O
W
E
R
,k
W
TP, PULSE WIDTH, sec
Non-Repetitive
Pulse Waveform
Shown in Fig.3
TA = 25
100
10
1.0
0.1
0.1uS
1.0uS
10uS
100uS
1.0mS 10mS
IF
S
M
,P
E
A
K
FO
R
W
A
R
D
S
U
R
G
E
FIG. 6 - MAXIMUM NON-REPETITIVE FORWARD
1
0
10
20
30
40
50
10
100
8.3ms Single Half Sine-Wave
(JEDED Method)
TJ = TJ max.
SURGE CURRENT UNIDIRECTIONAL
C
U
R
E
N
T
A
M
P
E
R
E
S
NUMBER OF CYCLES AT 60 Hz
相关PDF资料
PDF描述
TFMAJ11C 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
TFMAJ120CA 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
TFMAJ130C 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
TFMAJ13C 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
TFMAJ14CA 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
相关代理商/技术参数
参数描述
TFMAJ110CA-W 功能描述:TVS 二极管 - 瞬态电压抑制器 5% bi-dir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
TFMAJ110C-W 功能描述:TVS 二极管 - 瞬态电压抑制器 bi-dir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
TFMAJ110-W 功能描述:TVS 二极管 - 瞬态电压抑制器 _ RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
TFMAJ11A 制造商:RECTRON 制造商全称:Rectron Semiconductor 功能描述:GPP TRANSIENT VOLTAGE SUPPRESSOR (400 WATT PEAK POWER 1.0 WATT STEADY STATE)
TFMAJ11A-W 功能描述:TVS 二极管 - 瞬态电压抑制器 5% RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C