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参数资料
| 型号： | TH74KA22BVWORGD/T |
| 厂商： | ATMEL CORP |
| 元件分类： | 模拟信号调理 |
| 英文描述： | SPECIALTY ANALOG CIRCUIT, CQCC84 |
| 封装： | WINDOWED, CERAMIC, J LEAD PACKAGE-84 |
| 文件页数： | 20/20页 |
| 文件大小： | 1116K |
| 代理商： | TH74KA22BVWORGD/T |
TABLE3-STATIC CHARACTERISTICS
Symbol
Pin n°
EVEN/ODD
Function
Value
Unit
Note
Min
Typ
Max
VDD
15/71
Output amplifier
17.5
18
18.5
V
(1)
IDD
with Read Enable disabled
with Read Enable activated
0.7
1.1
mA
(2)
VDR
20/66
Reset bias
15.3
15.5
16.5
V
(1)
VN
22/64
internally connected
Photodiode substrate bias
11
11.3
11.5
V
GND
17/69
Video ground
0
2
V
(3)
VSS
18/68
Register substrate
V
VG1
30/56
Lateral skimming gate
1.9
2
2.1
V
VGL1
27/59
Preload skimming gate
2.8
3
5
V
(4)
VGL2
26/60
Preload storage gate
3
4
5
V
(4)
VGS
21/65
Register output gate
6.2
6.5
7
V
Note : 1 VDD-VDR > 1.8V
Note : 2 For each VDD Pin
Note : 3 Recommendation: tied to VSS or, for best operation, hold at +0.5V above VSS
Note : 4 VGL1 and VGL2 are used to calibrate preloading level see Fig. 7; to minimise noise effect, it is recommended
Note : 4 to get VGL1 and VGL2 from the same low noise supply.
TABLE4-DYNAMIC CHARACTERISTICS
Symbol
Pin n°
EVEN/ODD
Function
Value
Unit
Note
Min
Typ
Max
ΦL1 low
high
23/63
Longitudinal transfer stage
(120 pF typical)
0.1
9
0.3
9.5
0.7
10.5
V
ΦL2 low
high
25/61
(120 pF typical if all RE enabled)
0.1
9
0.3
9.5
0.7
10.5
V
ΦPL low
high
28/58
Preload injection diode
(10 pF typ.)
5.8
9.5
6
12
6.7
12.5
V
ΦR low
high
19/67
Read out reset gate
(10 pF typ.)
0.1
11.5
0.3
12
0.7
12.5
V
ΦX low
high
29/57
Lateral transfer stage
(10 pF typ.)
0.1
7.8
0.3
8
0.7
8.2
V
RE
low
high
24/62
Read enable
(15 pF typ.)
0.1
(
ΦL2 high
+2,5V)
0.2
0.4
15
V
TABLE 5 - MISCELLANEOUS DATA
Symbol
Pin n°
Function
Value
Unit
Note
Min
Typ
Max
ITH
35 to 42
Thermo cooler
3
6
A
(5)
44 to 51
VOS(DC)
16,70
Video signal DC level (wrt Vss)
12
V
(7)
ZO
Output impedance
1.2
K
(7)
Rpt
(at 0°C)
3to6
80 to 83
Temperature sensor resistance
(recommended max. current 1 mA)
100
(6)
FP
Transfer frequency
0.5
3
MHz
Note : 5 See Fig. 8a, 8b, 8c, 8d.
Note : 6 See Fig. 9.
Note : 7 Short circuit to Gnd or Vss exceeding 1 min duration may permanently damage the device
9/20
TH7422B
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