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参数资料
| 型号： | THS3062DGN |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 音频／视频放大 |
| 英文描述： | 1 CHANNEL, VIDEO PREAMPLIFIER, PDSO8 |
| 封装： | GREEN, PLASTIC, MSOP-8 |
| 文件页数： | 12/33页 |
| 文件大小： | 1015K |
| 代理商： | THS3062DGN |
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SLOS394B – JULY 2002 – REVISED NOVEMBER 2009
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ABSOLUTE MAXIMUM RATINGS
Over operating free-air temperature range unless otherwise noted.
(1)
VS
Supply voltage
±16.5 V
VI
Input voltage
±VS
IO
Output current
200 mA
VID
Differential input voltage
±3 V
Continuous power dissipation
See Dissipation Ratings Table
TJ
Maximum junction temperature
+150°C
TJ
(2)
Maximum junction temperature, continuous operation, long term reliability
+125°C
Tstg
Storage temperature range
–65°C to +150°C
(1)
The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may
cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
(2)
The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device.
PACKAGE DISSIPATION RATINGS
POWER RATING
θJC
θJA
(TJ = +125°C)
(2)
PACKAGE
(°C/W)
(°C/W)(1)
TA ≤ +25°C
TA = +85°C
D (8 pin)
38.3
97.5
1.02 W
410 mW
DDA (8 pin)(3)
9.2
45.8
2.18 W
873 mW
DGN (8 pin) (3)
4.7
58.4
1.71 W
680 mW
(1)
This data was taken using the JEDEC High-K test PCB.
(2)
This data was taken using 2 oz. trace and copper pad that is soldered directly to a 3 in x 3 in PCB.
(3)
The THS306x may incorporate a PowerPAD on the underside of the chip. This acts as a heatsink and must be connected to a thermally
dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature which could
permanently damage the device. See TI technical brief SLMA002 for more information about utilizing the PowerPAD thermally enhanced
package.
RECOMMENDED OPERATING CONDITIONS
MIN
MAX
UNIT
Dual supply
±5
±15
Supply voltage
V
Single supply
10
30
2
Copyright 2002–2009, Texas Instruments Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| THS3062DGNG4 | 功能描述:高速运算放大器 Hi-Vltg Hi-Slew-Rate Current Feedback RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS3062DGNR | 功能描述:高速运算放大器 Hi-Vltg Hi-Slew-Rate Current Feedback RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS3062DGNRG4 | 功能描述:高速运算放大器 Hi-Vltg Hi-Slew-Rate Current Feedback RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS3062DR | 功能描述:高速运算放大器 Hi-Vltg Hi-Slew-Rate Current Feedback RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS3062DRG4 | 功能描述:高速运算放大器 Hi-Vltg Hi-Slew-Rate Current Feedback RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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