参数资料
型号: THS4222D
厂商: TEXAS INSTRUMENTS INC
元件分类: 音频/视频放大
英文描述: 1 CHANNEL, VIDEO PREAMPLIFIER, PDSO8
封装: GREEN, PLASTIC, SOIC-8
文件页数: 14/38页
文件大小: 1219K
代理商: THS4222D
THS4221, THS4225
THS4222, THS4226
SLOS399G AUGUST 2002 REVISED JANUARY 2004
www.ti.com
21
PDmax +
Tmax–TA
qJA
where:
PDmax is the maximum power dissipation in the amplifier (W).
Tmax is the absolute maximum junction temperature (°C).
TA is the ambient temperature (°C).
θJA = θJC + θCA
θJC is the thermal coefficient from the silicon junctions to the
case (°C/W).
θCA is the thermal coefficient from the case to ambient air
(°C/W).
For systems where heat dissipation is more critical, the
THS4222 family is offered in MSOP with PowerPAD. The
thermal coefficient for the MSOP PowerPAD package is
substantially improved over the traditional SOIC.
Maximum power dissipation levels are depicted in the
graph for the two packages. The data for the DGN
package assumes a board layout that follows the
PowerPAD layout guidelines referenced above and
detailed in the PowerPAD application notes in the
Additional Reference Material section at the end of the
data sheet.
2
1.5
1
0
40
20
0
20
Maximum
Power
Dissipation
W
2.5
3
3.5
40
60
80
TA Ambient Temperature °C
P
D
8-Pin DGN Package
θJA = 170°C/W for 8-Pin SOIC (D)
θJA = 58.4°C/W for 8-Pin MSOP (DGN)
ΤJ = 150°C, No Airflow
Figure 38. Maximum Power Dissipation vs
Ambient Temperature
0.5
8-Pin D Package
When determining whether or not the device satisfies the
maximum power dissipation requirement, it is important to
consider not only quiescent power dissipation, but also
dynamic power dissipation. Often maximum power
dissipation is difficult to quantify because the signal pattern
is inconsistent, but an estimate of the RMS power
dissipation can provide visibility into a possible problem.
DESIGN TOOLS
Evaluation Fixtures, Spice Models, and
Applications Support
Texas Instruments is committed to providing its customers
with the highest quality of applications support. To support
this goal, evaluation boards have been developed for the
THS4222 family of operational amplifiers. The boards are
easy to use, allowing for straight-forward evaluation of the
device. These evaluation boards can be ordered through
the Texas Instruments web site, www.ti.com, or through
your local Texas Instruments sales representative.
Schematics for the two evaluation boards are shown
below with their default component values. Unpopulated
footprints are shown to provide insight into design
flexibility.
Figure 39. THS4222 EVM Circuit
Configuration
VS+
PwrPad
U1:A
R6
R3
J3
R1
R2
R6
R4
J1
J2
TP1
U1:B
R7
R10
J5
R8
R9
R11
R12
J6
J4
+
C6
VS
J7
C7
C9
C5
VS+
J9
+
FB2
C10
C8
FB1
VS
GND
VS+
VS
相关PDF资料
PDF描述
THS4222DR 1 CHANNEL, VIDEO PREAMPLIFIER, PDSO8
THS4222DGN 1 CHANNEL, VIDEO PREAMPLIFIER, PDSO8
THS4222DGNR 1 CHANNEL, VIDEO PREAMPLIFIER, PDSO8
THS4226DGQG4 1 CHANNEL, VIDEO PREAMPLIFIER, PDSO10
THS4225DGNR 1 CHANNEL, VIDEO PREAMPLIFIER, PDSO8
相关代理商/技术参数
参数描述
THS4222DG4 功能描述:高速运算放大器 Low-Distortion High- Speed R-to-R Output RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
THS4222DGK 功能描述:高速运算放大器 Low-Distortion High- Speed R-to-R Output RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
THS4222DGKG4 功能描述:高速运算放大器 Low-Distortion High- Speed R-to-R Output RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
THS4222DGKR 功能描述:高速运算放大器 Low-Distortion High- Speed R-to-R Output RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
THS4222DGKRG4 功能描述:高速运算放大器 Low-Distortion High- Speed R-to-R Output RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube