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参数资料
| 型号： | THS4222DGK |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 音频／视频放大 |
| 英文描述： | 1 CHANNEL, VIDEO PREAMPLIFIER, PDSO8 |
| 封装： | GREEN, PLASTIC, MSOP-8 |
| 文件页数： | 12/38页 |
| 文件大小： | 1219K |
| 代理商： | THS4222DGK |
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THS4221, THS4225
THS4222, THS4226
SLOS399G AUGUST 2002 REVISED JANUARY 2004
www.ti.com
2
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted(1)
UNIT
Supply voltage, VS
16.5 V
Input voltage, VI
±VS
Output current, IO
100 mA
Differential input voltage, VID
4 V
Continuous power dissipation
See Dissipation Rating Table
Maximum junction temperature, TJ
150°C
Maximum junction temperature, continuous
operation, long term reliability TJ (2)
125°C
Storage temperature range, Tstg
65°C to 150°C
Lead temperature
1,6 mm (1/16 inch) from case for 10 seconds
300°C
HBM
THS4221/5
2500 V
HBM
THS4222/6
3000 V
ESD ratings:
CDM
1500 V
ESD ratings:
MM
THS4221/5
150 V
MM
THS4222/6
200 V
(1) The absolute maximum ratings under any condition is limited by
the constraints of the silicon process. Stresses above these
ratings may cause permanent damage. Exposure to absolute
maximum conditions for extended periods may degrade device
reliability. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those
specified is not implied.
(2) The maximum junction temperature for continuous operation is
limited by package constraints. Operation above this temperature
may result in reduced reliability and/or lifetime of the device.
This integrated circuit can be damaged by ESD. Texas
Instruments recommends that all integrated circuits be
handled with appropriate precautions. Failure to observe
proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to
complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could
cause the device not to meet its published specifications.
PACKAGE DISSIPATION RATINGS
PACKAGE
ΘJC
ΘJA(1)
POWER RATING(2)
PACKAGE
ΘJC
(°C/W)
ΘJA()
(°C/W)
TA ≤ 25°C
TA = 85°C
DBV (5)
55
255.4
391 mW
156 mW
D (8)
38.3
97.5
1.02 W
410 mW
DGN (8) (3)
4.7
58.4
1.71 W
685 mW
DGK (8)
54.2
260
385 mW
154 mW
DGQ (10) (3)
4.7
58
1.72 W
690 mW
(1) This data was taken using the JEDEC standard High-K test PCB.
(2) Power rating is determined with a junction temperature of 125°C.
This is the point where distortion starts to substantially increase.
Thermal management of the final PCB should strive to keep the
junction temperature at or below 125°C for best performance and
long term reliability.
(3) The THS422x may incorporate a PowerPAD on the underside of
the chip. This acts as a heatsink and must be connected to a
thermally dissipative plane for proper power dissipation. Failure
to do so may result in exceeding the maximum junction
temperature which could permanently damage the device. See TI
technical brief SLMA002 and SLMA004 for more information
about utilizing the PowerPAD thermally enhanced package.
RECOMMENDED OPERATING CONDITIONS
MIN
MAX
UNIT
Supply voltage (VS and VS )
Dual supply
±1.35
±7.5
V
Supply voltage, (VS+ and VS)
Single supply
2.7
15
V
Input common-mode voltage range
VS + 1.1
VS+ 1.1
V
THS4221 AND THS4225 SINGLE PACKAGE/ORDERING INFORMATION
PACKAGED DEVICES
PLASTIC SMALL OUTLINE
(D)
SOT-23(1)
PLASTIC MSOP(2)
PowerPADE
PLASTIC MSOP(2)
(D)
(DBV)
SYM
(DGN)
SYM
(DGK)
SYM
THS4221D
THS4221DBV
BFS
THS4221DGN
BFT
THS4221DGK
BHX
THS4225D
—
THS4225DGN
BFU
THS4225DGK
BFY
(1) All packages are available taped and reeled. The R suffix standard quantity is 3000. The T suffix standard quantity is 250 (e.g., THS4221DBVT).
(2) All packages are available taped and reeled. The R suffix standard quantity is 2500 (e.g., THS4221DGNR).
PowerPAD is a trademark of Texas Instruments.
相关PDF资料 |
PDF描述 |
|---|---|
| THS4222DGKR | 1 CHANNEL, VIDEO PREAMPLIFIER, PDSO8 |
| THS4222D | 1 CHANNEL, VIDEO PREAMPLIFIER, PDSO8 |
| THS4222DR | 1 CHANNEL, VIDEO PREAMPLIFIER, PDSO8 |
| THS4222DGN | 1 CHANNEL, VIDEO PREAMPLIFIER, PDSO8 |
| THS4222DGNR | 1 CHANNEL, VIDEO PREAMPLIFIER, PDSO8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| THS4222DGKG4 | 功能描述:高速运算放大器 Low-Distortion High- Speed R-to-R Output RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS4222DGKR | 功能描述:高速运算放大器 Low-Distortion High- Speed R-to-R Output RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS4222DGKRG4 | 功能描述:高速运算放大器 Low-Distortion High- Speed R-to-R Output RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS4222DGN | 功能描述:高速运算放大器 Low-Distortion High- Speed R-to-R Output RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| THS4222DGN | 制造商:Texas Instruments 功能描述:OP AMP DUAL LOW DIST RRO/P 8MSOP |
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