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参数资料
| 型号： | TICP106DLP |
| 厂商： | BOURNS INC |
| 元件分类： | 晶闸管 |
| 英文描述： | 2 A, 400 V, SCR, TO-92 |
| 封装： | PLASTIC, LP003, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 101K |
| 代理商： | TICP106DLP |
TICP106 SERIES
SILICON CONTROLLED RECTIFIERS
P RO D UCT
INFORMA TION
1
MARCH 1988 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
LP PACKAGE
(TOP VIEW)
MDC1AA
G
A
K
1
2
3
LP PACKAGE
WITH FORMED LEADS
(TOP VIEW)
MDC1AB
G
A
K
1
2
3
● 2 A Continuous On-State Current
● 15 A Surge-Current
● Glass Passivated Wafer
● 400 V to 600 V Off-State Voltage
● Max IGT of 200 A
● Package Options
PACKAGE
PACKING
PART # SUFFIX
LP
Bulk
(None)
LP with fomed leads
Tape and Reel
R
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 k.
2. These values apply for continuous dc operation with resistive load. Above 25°C derate linearly to zero at 110°C.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4. This value applies for a maximum averaging time of 20 ms.
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage (see Note 1)
TICP106D
TICP106M
VDRM
400
600
V
Repetitive peak reverse voltage
TICP106D
TICP106M
VRRM
400
600
V
Continuous on-state current at (or below) 25°C case temperature (see Note 2)
IT(RMS)
2
A
Surge on-state current (see Note 3)
ITSM
15
A
Peak positive gate current (pulse width
≤ 300 s)
IGM
0.2
A
Average gate power dissipation (see Note 4)
PG(AV)
0.3
W
Operating case temperature range
TC
-40 to +110
°C
Storage temperature range
Tstg
-40 to +125
°C
Lead temperature 3.2 mm from case for 10 seconds
TL
230
°C
OBSOLET
E
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PDF描述 |
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| TICP106MLPR | 2 A, 600 V, SCR |
| TICP106MLP | 2 A, 600 V, SCR, TO-92 |
| TICP107DLPR | 1 A, 400 V, SCR |
| TICP107DLP | 1 A, 400 V, SCR, TO-92 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TICP106D-R-S | 功能描述:SCR 400V 2A SCR RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TICP106D-S | 功能描述:SCR 400V 2A SCR RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TICP106M | 制造商:Bourns Inc 功能描述:THYRISTOR 2A 600V TO-92 |
| TICP106M | 制造商:Bourns Inc 功能描述:THYRISTOR 2A 600V TO-92 |
| TICP106M-R-S | 功能描述:SCR 600V 2A SCR RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
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