参数资料
型号: TIL113M
厂商: Fairchild Optoelectronics Group
文件页数: 3/10页
文件大小: 0K
描述: PHOTOCOUPLER DARL OUT GP 6DIP
产品目录绘图: Opto 6-DIP Package
标准包装: 1,000
通道数: 1
输入类型: DC
电压 - 隔离: 5300Vrms
电流传输比(最小值): 300% @ 10mA
输出电压: 30V
电流 - DC 正向(If): 100mA
Vce饱和(最大): 1.25V
输出类型: 有基极的达林顿晶体管
安装类型: 通孔
封装/外壳: 6-DIP(0.300",7.62mm)
包装: 管件
产品目录页面: 2759 (CN2011-ZH PDF)
Electrical Characteristics (T A = 25°C Unless otherwise speci?ed.)
Individual Component Characteristics
Symbol
Parameter
Test Conditions
Device
Min.
Typ.
Max.
Unit
EMITTER
V F
Input Forward Voltage*
I F = 10mA
4NXXM
1.2
1.5
V
H11B1M,
0.8
1.2
1.5
TIL113M
I R
Reverse Leakage Current*
V R = 3.0V
4NXXM
0.001
100
μA
V R = 6.0V
H11B1M,
0.001
10
TIL113M
C
Capacitance*
V F = 0V, f = 1.0MHz
All
150
pF
DETECTOR
BV CEO
Collector-Emitter Breakdown Voltage* I C = 1.0mA, I B = 0
4NXXM,
30
60
V
TIL113M
H11B1M
25
60
BV CBO
Collector-Base Breakdown Voltage*
I C = 100μA, I E = 0
All
30
100
V
BV ECO
Emitter-Collector Breakdown Voltage* I E = 100μA, I B = 0
4NXXM
5.0
10
V
H11B1M,
TIL113M
7
10
I CEO
Collector-Emitter Dark Current*
V CE = 10V, Base Open
All
1
100
nA
Transfer Characteristics
Symbol
Parameter
Test Conditions
Device
Min.
Typ.
Max.
Unit
DC CHARACTERISTICS
I C(CTR)
Collector Output Current* (1, 2)
I F = 10mA, V CE = 10V,
4N32M,
50 (500)
mA (%)
I B = 0
4N33M
4N29M,
4N30M
10 (100)
I F = 1mA, V CE = 5V
I F = 10mA, V CE = 1V
H11B1M
TIL113M
5 (500)
30 (300)
V CE(SAT)
Saturation Voltage* (2)
I F = 8mA, I C = 2.0mA
4NXXM
1.0
V
TIL113M
1.25
AC CHARACTERISTICS
I F = 1mA, I C = 1mA
H11B1M
1.0
t on
Turn-on Time
I F = 200mA, I C = 50mA,
V CC = 10V, R L = 100 ?
4NXXM,
TIL113M
5.0
μs
I F = 10mA, V CE = 10V,
R L = 100 ?
H11B1M
25
t off
Turn-off Time
I F = 200mA, I C = 50mA,
V CC = 10V, R L = 100 ?
4N32M,
4N33M,
100
μs
TIL113M
4N29M,
4N30M
40
I F = 10mA, V CE = 10V,
R L = 100 ?
H11B1M
18
BW
Bandwidth (3, 4)
30
kHz
?2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
3
www.fairchildsemi.com
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