- 您现在的位置：买卖IC网 > PDF目录225307 > TIP107 (Boca Semiconductor Corp.) Power Darlingtons for Linear and Switching Applications PDF资料下载
参数资料
| 型号： | TIP107 |
| 厂商： | Boca Semiconductor Corp. |
| 英文描述： | Power Darlingtons for Linear and Switching Applications |
| 中文描述： | 电力Darlingtons线性和开关应用 |
| 文件页数： | 2/2页 |
| 文件大小： | 26K |
| 代理商： | TIP107 |
Continental Device India Limited
Data Sheet
Page 2 of 3
Collector current
IC
max.
8.0
A
Collector peak current
ICM
max.
15
A
Base current
IB
max.
1.0
A
Total power dissipation up to TC = 25°C Ptot
max.
80
W
Derate above 25°C
max
0.64
W/° C
Total power dissipation up to TA = 25°C Ptot
max.
2.0
W
Derate above 25°C
max
0.016
W/° C
Junction temperature
Tj
max.
150
°C
Storage temperature
Tstg
–65 to +150
°C
THERMAL RESISTANCE
From junction to ambient
Rth j–a
62.5
°C/W
From junction to case
Rth j–c
1.56
°C/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
100 101 102
105 106 107
Collector cutoff current
IB = 0; VCE = 30 V
ICEO
max. 50
–
A
IB = 0; VCE = 40 V
ICEO
max.
–
50
–
A
IB = 0; VCE = 50 V
ICEO
max.
–
50
A
IE = 0; VCB = 60V
ICBO
max. 50
–
A
IE = 0; VCB = 80V
ICBO
max.
–
50
–
A
IE = 0; VCB = 100V
ICBO
max.
–
50
A
Emitter cut-off current
IC = 0; VEB = 5 V
IEBO
max.
8
mA
Breakdown voltages
IC = 30 mA; IB = 0
VCEO(sus)*
min.
60
80
100 V
IC = 1 mA; IE = 0
VCBO
min.
60
80
100 V
IE = 1 mA; IC = 0
VEBO
min.
5.0
V
Saturation voltages
IC = 3 A; IB = 6 mA
VCEsat*
max.
2.0
V
IC = 8 A; IB = 80 mA
VCEsat*
max.
2.5
V
Base-emitter on voltage
IC = 8 A; VCE = 4 V
VBE(on)*
max.
2.8
V
D.C. current gain
IC = 3 A; VCE = 4 V
hFE*
min.
1.0
K
max.
20
K
IC = 8 A; VCE = 4 V
hFE*
min.
200
Small signal current gain
IC = 3A; VCE = 4V; f = 1.0 MHz
|hfe|
min.
4.0
Output capacitance f = 0.1 MHz
IE = 0; VCB = 10V, PNP
Co
max.
300
pF
NPN
max.
200
pF
Forward voltage of commutation diode
IF = –IC = 10A; IB = 0
VF*
max.
2.8
V
* Pulsed: pulse duration = 300 s; duty cycle
≤ 2%.
TIP100, TIP101, TIP102
TIP105, TIP106, TIP107
http://www.bocasemi.com
page: 2
相关PDF资料 |
PDF描述 |
|---|---|
| TIP110 | PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS |
| TIP111 | PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS |
| TIP112 | PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS |
| TIP112 | EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) |
| TIP120 | Power Darlingtons for Linear and Switching Applications |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TIP107 | 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-220 制造商:STMicroelectronics 功能描述:Darlington PNP Transistor |
| TIP107-BP | 制造商:Micro Commercial Components (MCC) 功能描述:PNP PLASTIC MEDIUM-POWER SILICON TRANSISTORS |
| TIP107G | 功能描述:达林顿晶体管 8A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| TIP107-S | 功能描述:达林顿晶体管 PNP DARLINGTON 100V 8A RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| TIP107TU | 功能描述:达林顿晶体管 PNP Epitaxial Sil Darl RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。