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参数资料
| 型号： | TIP122 |
| 厂商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, HAMMER DRIVER,PULSE MOTOR DRIVER) |
| 中文描述： | 外延平面NPN晶体管（开关，锤子驱动器，步进电机驱动） |
| 文件页数： | 1/2页 |
| 文件大小： | 28K |
| 代理商： | TIP122 |
Continental Device India Limited
Data Sheet
Page 1 of 3
TIP120, 121, 122
NPN PLASTIC POWER TRANSISTORS
TIP125, 126, 127
PNP PLASTIC POWER TRANSISTORS
Power Darlingtons for Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS
120 121 122
125 126 127
Collector-base voltage (open emitter)
VCBO
max. 60
80
100
V
Collector-emitter voltage (open base)
VCEO
max. 60
80
100
V
Collector current
IC
max.
5.0
A
Total power dissipation up to TC = 25°C
Ptot
max.
65
W
Junction temperature
Tj
max.
150
°C
Collector-emitter saturation voltage
IC = 3 A; IB = 12 mA
VCEsat max.
2.0
V
D.C. current gain
IC = 0.5 A; VCE = 3 V
hFE
min.
1.0
RATINGS (at TA=25°C unless otherwise specified)
120 121 122
125 126 127
Collector-base voltage (open emitter)
VCBO
max. 60
80
100
V
Collector-emitter voltage (open base)
VCEO
max. 60
80
100
V
Emitter-base voltage (open collector)
VEBO
max.
5.0
V
TIP120, TIP121, TIP122
TIP125, TIP126, TIP127
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
B
1 23
J
M
G
D
H
A
O
K
N
L
F
E
C
DIM
M IN .
M A X.
A
lldi
m
ins
ions
in
m
.
A
14.42
16.51
B
9.63
10.67
C
3.56
4.83
D0.90
E
1.15
1.40
F
3.75
3.88
G
2.29
2.79
H
2.54
3.43
J0.56
K
12.70
14.73
L
2.80
4.07
M
2.03
2.92
N
31.24
OD E G 7
1
2
3
4
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
TO-220 Plastic Package
Boca Semiconductor Corp.
http://www.bocasemi.com
page: 1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TIP-122 | 制造商:Freescale Semiconductor 功能描述: |
| TIP122 | 制造商:ON Semiconductor 功能描述:TRANSISTOR DARLINGTON TO-220 制造商:STMicroelectronics 功能描述:TRANSISTOR DARLINGTON TO-220 |
| TIP122_08 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN EPITAXIAL TRANSISTOR |
| TIP122_11 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:NPN Silicon Transistors |
| TIP122-BP | 功能描述:两极晶体管 - BJT NPN 100V 5A 65W RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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