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参数资料
| 型号： | TIP3055 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | POWER TRANSISTORS COMPLEMENTARY SILICON |
| 中文描述： | 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-218 |
| 文件页数： | 2/4页 |
| 文件大小： | 117K |
| 代理商： | TIP3055 |
2
Motorola Bipolar Power Transistor Device Data
(VCE = 70 Vdc, RBE = 100 Ohms)
Collector Cutoff Current
ICEO
—
0.7
mAdc
(VBE = 7.0 Vdc, IC = 0)
ON CHARACTERISTICS (1)
DC Current Gain
hFE
—
(IC = 4.0 Adc, IB = 400 mAdc)
20
70
Base–Emitter On Voltage
VBE(on)
—
—
3.0
1.8
Vdc
Current Gain — Bandwidth Product
Small–Signal Current Gain
NOTE: For additional design curves, refer to electrical characteristics curves of 2N3055.
hfe
2.5
15
—
—
MHz
kHz
I
10
5.0
3.0
0.1
0.3
0.2
2.0
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1.0
2.0
4.0
6.0
10
20
0.5
1.0
20
30
50
100
40
60
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25
°
C
TJ = 150
°
C
300
μ
s
1.0 ms
10 ms
dc
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 2 is based on TC = 25 C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated for
temperature.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TIP3055 | 制造商:Bourns Inc 功能描述:TRANSISTOR NPN SOT-93 |
| TIP3055F | 制造商:TRSYS 制造商全称:Transys Electronics 功能描述:POWER TRANSISTORS |
| TIP3055G | 功能描述:两极晶体管 - BJT 15A 60V 80W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| TIP3055HVF | 制造商:CDIL 制造商全称:Continental Device India Limited 功能描述:TO-3P Fully Isolated Plastic Package Transistor CDIL |
| TIP3055-S | 功能描述:两极晶体管 - BJT 60V 15A NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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