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参数资料
| 型号： | TIP34C |
| 厂商： | 意法半导体 |
| 英文描述： | Complemetary Silicon Power Transistors(互补硅功率晶体管) |
| 中文描述： | Complemetary硅功率晶体管（互补硅功率晶体管） |
| 文件页数： | 2/4页 |
| 文件大小： | 64K |
| 代理商： | TIP34C |
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
1.56
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
μ
A
I
CES
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
B
= 0)
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
BE(on)
Base-Emitter Voltage
V
CE
= 140 V
400
I
CEO
V
CE
= 60 V
0.7
mA
I
EBO
V
EB
= 5 V
1
mA
I
C
= 30 mA
100
V
I
C
= 3 A I
B
= 0.3 A
I
C
= 10 A I
B
= 2.5 A
1
4
V
V
I
C
= 3 A V
CE
= 4 V
I
C
= 10 A V
CE
= 4 V
1.6
3
V
V
h
FE
DC Current Gain
I
C
= 1 A V
CE
= 4 V
I
C
= 3 A V
CE
= 4 V
I
C
= 0.5 A V
CE
= 10 V
f = 1 MHz
40
20
100
h
fe
Small Signal Current
Gain
20
f
T
Transition frequency
I
C
= 0.5 A V
CE
= 10 V
f = 1 MHz
3
MHz
t
on
t
s
t
f
RESISTIVE LOAD
Turn-on Time
Storage Time
Fall Time
VCC = 30V I
C
= 6 A
V
BB
= - 6 V I
B1
= - I
B2
= 0.6 A
t
p
= 20
μ
s
0.6
0.4
1
μ
s
μ
s
μ
s
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
For PNP types voltage and current values are negative.
TIP33C/TIP34C
2/4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TIP-34C | 制造商:Texas Instruments 功能描述: |
| TIP34CF | 制造商:CDIL 制造商全称:Continental Device India Limited 功能描述:TO-3P Fully Isolated Plastic Package Transistor CDIL |
| TIP34C-S | 功能描述:两极晶体管 - BJT 100V 10A PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| TIP34D | 制造商:MOSPEC 制造商全称:Mospec Semiconductor 功能描述:POWER TRANSISTORS(10A,120-160V,80W) |
| TIP34E | 制造商:MOSPEC 制造商全称:Mospec Semiconductor 功能描述:POWER TRANSISTORS(10A,120-160V,80W) |
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