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参数资料
| 型号： | TISP3165T3BJR-S |
| 厂商： | BOURNS INC |
| 元件分类： | 浪涌电流限制器 |
| 英文描述： | 165 V, 30 A, SILICON SURGE PROTECTOR |
| 封装： | ROHS COMPLIANT, PLASTIC, SMB, MODIFIED DO-214AA, 3 PIN |
| 文件页数： | 1/9页 |
| 文件大小： | 362K |
| 代理商： | TISP3165T3BJR-S |
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
TISP3070T3BJ THRU TISP3395T3BJ
DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
SMB Package (Top View)
Device Symbol
Description
These dual bidirectional thyristor devices protect central office, access and customer premise equipment against overvoltages on the
telecom line. The TISP3xxxT3BJ is available in a wide range of voltages and has an 80 A 10/1000 current rating. These protectors have
been specified mindful of the following standards and recommendations: GR-1089-CORE, TIA/EIA-IS-968, UL 60950, EN 60950, IEC
60950, ITU-T K.20, K.21 and K.45. The TISP3350T3BJ meets the FCC Part 68 “B” ringer voltage requirement (VDRM = ±275 V). Housed
in a 3-pin modified SMB (DO-214AA) package, the TISP3xxxT3BJ range is space efficient solution for protection designs of 80 A or less
which use multiple SMBs.
These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, VDRM, see Figure 1. Voltages above
VDRM are limited and will not exceed the breakover voltage, V(BO), level. If sufficient current flows due to the overvoltage, the device
switches into a low-voltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted cur-
rent falls below the holding current, IH, level the device switches off and restores normal system operation.
How To Order
Dual High Current Protectors in a Space Efficient
Package
- 2 x 100 A 10/560 Current Rating
- Modified 3-pin SMB (DO-214AA) Package
50 % Space Saving over Two SMBs
- Y Configurations with Two SMB Packages
2 x 80 A, 10/1000 . . . .TISP3xxxT3BJ + TISP4xxxJ1BJ
2 x 100 A, 10/700 . . . .TISP3xxxT3BJ + TISP4xxxH3BJ
Ion-Implanted Breakdown Region
- Precise and Stable Voltage
- Low Voltage Overshoot under Surge
MDXXCJA
1
3
2
3
(T or R)
SD3TA A
1
(T or R)
2
(G)
Rated for International Surge Wave Shapes
Wave Shape
Standard
IPPSM
A
2/10
GR-1089-CORE
250
8/20
IEC 61000-4-5
250
10/160
TIA/EIA-IS-968 (FCC Part 68)
150
10/700
ITU-T K.20/.21/.45
120
10/560
TIA/EIA-IS-968 (FCC Part 68)
100
10/1000
GR-1089-CORE
80
Device
VDRM
V
V(BO)
V
TISP3070T3
58
70
TISP3080T3
65
80
TISP3095T3
75
95
TISP3115T3
90
115
TISP3125T3
100
125
TISP3145T3
120
145
TISP3165T3
135
165
TISP3180T3
145
180
TISP3200T3
155
200
TISP3219T3
180
219
TISP3250T3
190
250
TISP3290T3
220
290
TISP3350T3
275
350
TISP3395T3
320
395
Device
Package
Carrier
TISP3xxxT3BJ
BJ (3-pin modified SMB/DO-214AA J-Bend)
R (Embossed Tape Reeled)
TISP3xxxT3BJR-S
Insert xxx value corresponding to protection voltages of 070, 080, 095, 115, etc.
Order As
.......................................UL Recognized Component
*RoHS
COMPLIANT
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TISP3180 | 功能描述:硅对称二端开关元件 RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TISP3180F3 | 制造商:POINN 制造商全称:Power Innovations Ltd 功能描述:DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS |
| TISP3180F3D | 功能描述:硅对称二端开关元件 Medium Volt Dual Bidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TISP3180F3DR | 功能描述:硅对称二端开关元件 Medium Volt Dual Bidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TISP3180F3DR-S | 功能描述:硅对称二端开关元件 Medium Volt Dual Bidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
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