参数资料
型号: TISP3240F3DR
厂商: Bourns Inc.
文件页数: 2/12页
文件大小: 0K
描述: SURGE SUPP 180V BIDIR 8-SOIC
标准包装: 2,500
电压 - 击穿: 240V
电压 - 断路: 180V
电压 - 导通状态: 3V
电流 - 峰值脉冲(8 x 20µs): 120A
电流 - 峰值脉冲(10 x 1000µs): 35A
电流 - 保持 (Ih): 150mA
元件数: 2
电容: 45pF
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
包装: 带卷 (TR)
TISP3xxxF3 (HV) Overvoltage Protector Series
Absolute Maximum Ratings, T A = 25 °C (Unless Otherwise Noted)
Rating
‘3240F3
Symbol
Value
± 180
Unit
Repetitive peak off-state voltage, 0 ° C < T A < 70 ° C
‘3260F3
‘3290F3
V DRM
± 200
± 220
V
‘3320F3
‘3380F3
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
1/2 (Gas tube differential transient, 1/2 voltage wave shape)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 ? resistor)
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
± 240
± 270
350
175
90
120
10/160 (FCC Part 68, 10/160 voltage wave shape)
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
5/320 (FCC Part 68, 9/720 voltage wave shape, single)
10/560 (FCC Part 68, 10/560 voltage wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
Non-repetitive peak on-state current, 0 ° C < T A < 70 ° C (see Notes 1 and 3)
50 Hz, 1 s
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A
Junction temperature
Storage temperature range
I PPSM
I TSM
di T /dt
T J
T stg
60
55
38
50
50
45
35
4.3
250
-65 to +150
-65 to +150
A
A
A/ μ s
° C
° C
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially, the TISP ? device m ust be in thermal equilibrium with 0 °C < T J <70 °C. The surge may be repeated after the TISP ? device
returns to its initial conditions.
3. Above 70 °C, derate linearly to zero at 150 °C lead temperature.
Electrical Characteristics for R and T Terminal Pair, T A = 25 °C (Unless Otherwise Noted)
I DRM
I D
Parameter
Repetitive peak off-
state current
Off-state current
Test Conditions
V D = ± 2V DRM , 0 ° C < T A < 70 ° C
V D = ± 50 V
Min
Typ
Max
± 10
± 10
Unit
μ A
μ A
f = 100 kHz, V d = 100 mV , V D = 0,
C off
Off-state capacitance
Third terminal voltage = -50 V to +50 V
0.05
0.15
pF
(see Notes 4 and 5)
NOTES: 4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
5. Further details on capacitance are given in the Applications Information section.
MARCH 1994 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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