参数资料
| 型号： | TISP3290F3DR |
| 厂商： | Bourns Inc. |
| 文件页数： | 11/12页 |
| 文件大小： | 0K |
| 描述： | SURGE SUPP 220V BIDIR 8-SOIC |
| 标准包装： | 2,500 |
| 电压 - 击穿： | 290V |
| 电压 - 断路： | 220V |
| 电压 - 导通状态： | 3V |
| 电流 - 峰值脉冲(8 x 20µs)： | 120A |
| 电流 - 峰值脉冲(10 x 1000µs)： | 35A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 2 |
| 电容： | 45pF |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 带卷 (TR) |
TISP3xxxF3 (HV) Overvoltage Protector Series
APPLICATIONS INFORMATION
Protection Voltage
The protection voltage, (V (BO) ), increases under lightning surge conditions due to thyristor regeneration. This increase is dependent on
the rate of current rise, di/dt, when the TISP ? device is clamping the voltage in its breakdown region. The V (BO) value under surge
conditions can be estimated by multiplying the 50 Hz rate V (BO) (250 V/ms) value by the normalized increase at the surge’s di/dt (Figure
7 ). An estimate of the di/dt can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance.
As an example, the ITU-T K.21 1.5 kV, 10/700 μs surge has an average dv/dt of 150 V/μs, but, as the rise is exponential, the initial dv/dt
is higher, being in the region of 450 V/μs. The instantaneous generator output resistance is 25 ? . If the equipment has an additional
series resistance of 20 ? , the total series resistance becomes 45 ? . The maximum di/dt then can be estimated as 450/45 = 10 A/μs. In
practice, the measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope resistance of the
TISP ? breakdown region.
Capacitance
Off-state Capacitance
The off-state capacitance of a TISP ? device is sensitive to junction temperature, T J , and the bias voltage, comprising of the d.c. voltage,
V D , and the a.c. voltage, V d . All the capacitance values in this data sheet are measured with an a.c. voltage of 100 mV. The typical 25 °C
variation of capacitance value with a.c. bias is shown in Figure 17. When V D >> V d , the capacitance value is independent on the value of
V d . The capacitance is essentially constant over the range of normal telecommunication frequencies.
NORMALIZED CAPACITANCE
vs
1.05
1.00
0.95
0.90
0.85
0.80
0.75
RMS AC TEST VOLTAGE
Normalized to V d = 100 mV
AIXXAA
DC Bias, V D = 0
0.70
1
10
100
1000
V d - RMS AC Test Voltage - mV
Figure 16.
MARCH 1994 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TISP3290F3DR-S | 功能描述:硅对称二端开关元件 High Volt Dual Bidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TISP3290F3SL | 功能描述:硅对称二端开关元件 High Volt Dual Bidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TISP3290F3SL-S | 功能描述:硅对称二端开关元件 High Volt Dual Bidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TISP3290H3 | 制造商:BOURNS 制造商全称:Bourns Electronic Solutions 功能描述:Overvoltage Protector Series |
| TISP3290H3SL | 功能描述:硅对称二端开关元件 Dual Bidirectional overvolt protecter RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
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