参数资料
型号: TISP4080M3BJR-S
厂商: Bourns Inc.
文件页数: 2/12页
文件大小: 0K
描述: PROTECTOR SINGLE BIDIRECTIONAL
标准包装: 3,000
电压 - 击穿: 80V
电压 - 断路: 65V
电压 - 导通状态: 3V
电流 - 峰值脉冲(8 x 20µs): 220A
电流 - 峰值脉冲(10 x 1000µs): 50A
电流 - 保持 (Ih): 150mA
元件数: 1
电容: 87pF
封装/外壳: DO-214AA,SMB
包装: 带卷 (TR)
TISP4xxxM3BJ Overvoltage Protector Series
Description (continued)
The TISP4xxxM3BJ range consists of nineteen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These medium (M) current protection
devices are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed tape reel pack. For alternative
voltage and holding current values, consult the factory. For higher rated impulse currents in the SMB package, the 100 A 10/1000
TISP4xxxH3BJ series is available.
Absolute Maximum Ratings, TA = 25 ° C (Unless Otherwise Noted)
Rating
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
Symbol
Value
± 58
± 65
± 75
± 90
± 100
± 120
± 135
± 145
± 155
Unit
Repetitive peak off-state voltage, (see Note 1)
‘4220
V DRM
± 160
V
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4360
‘4395
‘4400
± 180
± 190
± 200
± 220
± 230
± 275
± 290
± 320
± 300
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10 μ s (GR-1089-CORE, 2/10 μ s voltage wave shape) 300
8/20 μ s (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 220
10/160 μ s (FCC Part 68, 10/160 μ s voltage wave shape) 120
5/200 μ s (VDE 0433, 10/700 μ s voltage wave shape) 110
I TSP
0.2/310 μ s (I3124, 0.5/700 μ s voltage wave shape) 100
5/310 μ s (ITU-T K.20/21/45, K.44 10/700 μ s voltage wave shape) 100
5/310 μ s (FTZ R12, 10/700 μ s voltage wave shape) 100
10/560 μ s (FCC Part 68, 10/560 μ s voltage wave shape) 75
10/1000 μ s (GR-1089-CORE, 10/1000 μ s voltage wave shape) 50
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
A
20 ms (50 Hz) full sine wave
30
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
I TSM
32
2.1
A
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 100 A di T /dt 300 A/ μ s
Junction temperature
Storage temperature range
T J
T stg
-40 to +150
-65 to +150
° C
° C
NOTES: 1. See Applications Information and Figure 11 for voltage values at lower temperatures.
2. Initially, the TISP4xxxM3BJ must be in thermal equilibrium with T J = 25 ° C.
3. The surge may be repeated after the TISP4xxxM3BJ returns to its initial conditions.
4. See Applications Information and Figure 12 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 9 for the current ratings at other durations. Derate current values at -0.61 %/ ° C for ambient temperatures
above 25 ° C.
NOVEMBER 1997 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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