参数资料
型号: TISP4125H3BJRS
厂商: Bourns Inc.
文件页数: 3/13页
文件大小: 0K
描述: SURGE SUPP 100V BIDIR DO-214AA
产品培训模块: ESD Protection Products
标准包装: 3,000
电压 - 击穿: 125V
电压 - 断路: 100V
电压 - 导通状态: 3V
电流 - 峰值脉冲(8 x 20µs): 300A
电流 - 峰值脉冲(10 x 1000µs): 100A
电流 - 保持 (Ih): 150mA
元件数: 1
电容: 79pF
封装/外壳: DO-214AA,SMB
包装: 带卷 (TR)
其它名称: TISP4125H3BJR
TISP4125H3BJR-ND
TISP4xxxH3BJ Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25 ° C (Unless Otherwise Noted)
Rating
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
Symbol
Value
± 58
± 65
± 75
± 90
± 100
± 120
± 135
± 145
Unit
Repetitive peak off-state voltage, (see Note 1)
‘4200
‘4220
V DRM
± 155
± 160
V
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4395
‘4400
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10 μ s (GR-1089-CORE, 2/10 μ s voltage wave shape)
8/20 μ s (IEC 61000-4-5, 1.2/50 μ s voltage, 8/20 current combination wave generator)
10/160 μ s (FCC Part 68, 10/160 μ s voltage wave shape)
± 180
± 190
± 200
± 220
± 230
± 275
± 320
± 300
500
300
250
5/200 μ s (VDE 0433, 10/700 μ s voltage wave shape)
0.2/310 μ s (I3124, 0.5/700 μ s voltage wave shape)
5/310 μ s (ITU-T K.20/21, 10/700 μ s voltage wave shape)
5/310 μ s (FTZ R12, 10/700 μ s voltage wave shape)
10/560 μ s (FCC Part 68, 10/560 μ s voltage wave shape)
10/1000 μ s (GR-1089-CORE, 10/1000 μ s voltage wave shape)
I TSP
220
200
200
200
160
100
A
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms (50 Hz) full sine wave
55
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A
Junction temperature
Storage temperature range
I TSM
di T /dt
T J
T stg
60
2.1
400
-40 to +150
-65 to +150
A
A/ μ s
° C
° C
NOTES: 1.
2.
3.
4.
5.
See Applications Information and Figure 10 for voltage values at lower temperatures.
Initially, the TISP4xxxH3BJ must be in thermal equilibrium with T J = 25 ° C.
The surge may be repeated after the TISP4xxxH3BJ returns to its initial conditions.
See Applications Information and Figure 11 for current ratings at other temperatures.
EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/ ° C for ambient
temperatures above 25 ° C.
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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参数描述
TISP4125H3BJR-S 功能描述:硅对称二端开关元件 100V(DRM) 500A(IPP) 125V(BO) RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
TISP4125H3LM 功能描述:硅对称二端开关元件 RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
TISP4125H3LMFR 功能描述:硅对称二端开关元件 RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
TISP4125H3LMFR-S 功能描述:硅对称二端开关元件 PROTECTOR - SINGLE BIDIRECTIONAL RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
TISP4125H3LM-S 功能描述:硅对称二端开关元件 Single bidirectional protector RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA