参数资料
型号: TISP4200M3BJR
厂商: Bourns Inc.
文件页数: 1/12页
文件大小: 0K
描述: SURGE SUPP 155V BIDIR DO-214AA
标准包装: 3,000
电压 - 击穿: 200V
电压 - 断路: 155V
电压 - 导通状态: 3V
电流 - 峰值脉冲(8 x 20µs): 220A
电流 - 峰值脉冲(10 x 1000µs): 50A
电流 - 保持 (Ih): 150mA
元件数: 1
电容: 62pF
封装/外壳: DO-214AA,SMB
包装: 带卷 (TR)
TISP4070M3BJ THRU TISP4115M3BJ,
TISP4125M3BJ THRU TISP4220M3BJ,
TISP4240M3BJ THRU TISP4400M3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4xxxM3BJ Overvoltage Protector Series
ITU-T K.20/21/44/45 rating ................ 4 kV 10/700, 100 A 5/310
Ion-Implanted Breakdown Region
Precise and Stable Voltage
SMBJ Package (Top View)
Low Voltage Overshoot under Surge
R(B) 1
2 T(A)
Device
‘4070
V DRM
V
58
V (BO)
V
70
MDXXBGE
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
65
75
90
100
120
135
145
80
95
115
125
145
165
180
Device Symbol
T
‘4200
‘4220
‘4240
‘4250
‘4265
155
160
180
190
200
200
220
240
250
265
SD4XAA
R
T erminals T and R correspond to the
alternative line designators of A and B
‘4290
‘4300
‘4350
‘4360
‘4395
‘4400
220
230
275
290
320
300
290
300
350
360
395
400
Wave Shape
2/10 μ s
8/20 μ s
Standard
GR-1089-CORE
IEC 61000-4-5
I TSP
A
300
220
10/160 μ s
FCC Part 68
120
Low Differential Capacitance ................................. 39 pF max.
10/700 μ s
ITU-T K.20/21/45
100
?
............................................ UL Recognized Component
10/560 μ s
10/1000 μ s
FCC Part 68
GR-1089-CORE
75
50
Description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as
the d iverted current subsides.
How To Order
Device
Package
Carrier
Order As
TISP 4xxxM3BJ BJ (J-Bend DO-214AA/SMB) Embossed Tape Reeled TISP4xxxM3BJR-S
Insert xxx value corresponding to protection voltages of 070, 080, 095, 115, etc.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
NOVEMBER 1997 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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相关代理商/技术参数
参数描述
TISP4200M3BJRS 制造商:Bourns Inc 功能描述:
TISP4200M3BJR-S 功能描述:硅对称二端开关元件 BI-DIRECTIONL PRTCTR 155volts RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
TISP4200M3BJ-S 制造商:BOURNS 制造商全称:Bourns Electronic Solutions 功能描述:BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4200M3LMR-S 制造商:Bourns Inc 功能描述:
TISP4200M3LM-S 制造商:Bourns Inc 功能描述: