参数资料
型号: TISP4220H3BJR
厂商: Bourns Inc.
文件页数: 1/11页
文件大小: 0K
描述: SURGE SUPP 160V BIDIR DO-214AA
标准包装: 3,000
电压 - 击穿: 220V
电压 - 断路: 160V
电压 - 导通状态: 3V
电流 - 峰值脉冲(8 x 20µs): 300A
电流 - 峰值脉冲(10 x 1000µs): 100A
电流 - 保持 (Ih): 150mA
元件数: 1
电容: 74pF
封装/外壳: DO-214AA,SMB
包装: 带卷 (TR)
TISP4165H4BJ THRU TISP4200H4BJ,
TISP4265H4BJ THRU TISP4350H4BJ
HIGH HOLDING CURRENT
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4xxxH4BJ Overvoltage Protector Series
ITU-T K.20/21 Rating ........................ 8 kV 10/700, 200 A 5/310
High Holding Current ........................................... 225 mA min.
SMBJ Package (Top View)
Ion-Implanted Breakdown Region
Precise and Stable Voltage
R(B) 1
2
T(A)
Low Voltage Overshoot under Surge
Device
‘4165
‘4180
‘4200
‘4265
‘4300
‘4350
V DRM
V
135
145
155
200
230
275
V (BO)
V
165
180
200
265
300
350
Device Symbol
T
MDXXBG
Rated for International Surge Wave Shapes
Waveshape
2/10 μ s
Standard
GR-1089-CORE
I TSP
A
500
R
SD4XAA
8/20 μ s
10/160 μ s
10/700 μ s
10/560 μ s
10/1000 μ s
IEC 61000-4-5
FCC Part 68
ITU-T K.20/21
FCC Part 68
GR-1089-CORE
300
250
200
160
100
Terminals T and R correspond to the
alternative line designators of A and B
Low Differential Capacitance .................................. 67 pF max.
.............................................. UL Recognized Component
Description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g., between the Ring and Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g., 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as
the d iverted current subsides.
How To Order
Device
TISP4xxxH4BJ
Package
BJ (J-Bend DO-214AA/SMB)
Carrier
Embossed Tape Reeled
Bulk Pack
Order As
TISP4xxxH4BJR-S
TISP4xxxH4BJ-S
Insert xxx value corresponding to protection voltages of 165 through to 350.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
相关PDF资料
PDF描述
SSQ-137-03-G-S CONN RCPT .100" 37POS SNGL GOLD
TISP4200H4BJR SURGE SUPP 155V BIDIR DO-214AA
SSQ-139-02-T-D-RA CONN RCPT .100" 78POS DL R/A TIN
SSW-123-01-S-D CONN RCPT .100" 46POS DUAL GOLD
TISP4180M3BJR SURGE SUPP 145V BIDIR DO-214AA
相关代理商/技术参数
参数描述
TISP4220H3BJR-S 功能描述:硅对称二端开关元件 160V(DRM)500A(IPP)220V(BO) RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
TISP4220H3LM 功能描述:硅对称二端开关元件 RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
TISP4220H3LMFR 功能描述:硅对称二端开关元件 RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
TISP4220H3LMFR-S 功能描述:硅对称二端开关元件 PROTECTOR - SINGLE BIDIRECTIONAL RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
TISP4220H3LMR 功能描述:硅对称二端开关元件 RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA