参数资料
| 型号： | TISP4C115H3BJR-S |
| 厂商： | Bourns Inc. |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | SURGE PROT THYRIST 115V TELECOM |
| 产品培训模块： | ESD Protection Products |
| 产品目录绘图： | TISP4C Series Top TISP4C Series Side 1 TISP4C Series Side 2 |
| 标准包装： | 1 |
| 电压 - 击穿： | 115V |
| 电压 - 断路： | 90V |
| 电压 - 导通状态： | 3V |
| 电流 - 峰值脉冲(10 x 1000µs)： | 100A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 1 |
| 电容： | 50pF |
| 封装/外壳： | DO-214AA，SMB |
| 包装： | 标准包装 |
| 其它名称： | TISP4C115H3BJR-SDKR |
TISP4C115H3BJ THRU TISP4C350H3BJ
LOW CAPACITANCE
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4CxxxH3BJ Overvoltage Protector Series
Ion-Implanted Breakdown Region
- Precise and Stable Voltage
- Low Voltage Overshoot under Surge
- Low Off-State Capacitance
SMB Package (Top View)
Device Name
TISP4C115H3BJ ?
TISP4C125H3BJ ?
TISP4C145H3BJ ?
TISP4C165H3BJ
TISP4C180H3BJ ?
TISP4C220H3BJ ?
TISP4C250H3BJ ?
TISP4C290H3BJ ?
TISP4C350H3BJ ?
V DRM
V
90
100
120
135
145
180
190
220
275
V (BO)
V
115
125
145
165
180
220
250
290
350
Device Symbol
R 1
T
2 T
MD-SMB-004-a
R
Rated for International Surge Wave Shapes
SD-TISP4xxx-001-a
Wave Shape
2/10
10/160
10/700
10/560
10/1000
Standard
GR-1089-CORE
TIA-968-A
ITU-T K.20/21/45
TIA-968-A
GR-1089-CORE
I PPSM
A
500
200
150
100
100
...................................................... UL Recognized Component
Description
This device is designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning ?ash
disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for
the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping un-
til the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes
the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup
as t he diverted current subsides.
Please contact your Bourns representative if the protection voltage you require is not listed.
How to Order
Marking
Device
TISP4CxxxH3BJ
Package
SMB
Carrier
Embossed Tape Reeled
Order As
TISP4CxxxH3BJR-S
Code
4CxxxH
Std. Qty.
3000
Insert xxx corresponding to device name.
SEPTEMBER 2004 – REVISED JANUARY 2010
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.
Speci?cations are subject to change without notice.
Customers should verify actual device performance in their speci?c applications.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TISP4C125H3BJ | 制造商:BOURNS 制造商全称:Bourns Electronic Solutions 功能描述:LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP4C125H3BJR-S | 功能描述:硅对称二端开关元件 VDRM 100 RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TISP4C145H3BJ | 制造商:BOURNS 制造商全称:Bourns Electronic Solutions 功能描述:LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP4C145H3BJR-S | 功能描述:硅对称二端开关元件 145volt 100amp DO-214 RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TISP4C165H3BJR-S | 功能描述:硅对称二端开关元件 165volt 100amp DO-214 RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
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