参数资料
| 型号： | TISP4C165H3BJR-S |
| 厂商： | Bourns Inc. |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | PROTECTOR SGL BIDIRECTIONAL LF |
| 标准包装： | 3,000 |
| 电压 - 击穿： | 165V |
| 电压 - 断路： | 135V |
| 电压 - 导通状态： | 3V |
| 电流 - 峰值脉冲(10 x 1000µs)： | 100A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 1 |
| 电容： | 45pF |
| 封装/外壳： | DO-214AA，SMB |
| 包装： | 带卷 (TR) |
TISP4CxxxH3BJ Overvoltage Protector Series
Absolute Maximum Ratings, T A = 25 °C (Unless Otherwise Noted)
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage
'4C115H3BJ
'4C125H3BJ
'4C145H3BJ
'4C165H3BJ
'4C180H3BJ
'4C220H3BJ
'4C250H3BJ
'4C290H3BJ
'4C350H3BJ
V DRM
± 90
± 100
± 120
± 135
± 145
± 180
± 190
± 220
± 275
V
Non-repetitive peak impulse current (see Notes 1 and 2)
2/10 μs (GR-1089-CORE, 2/10 μs voltage wave shape)
10/160 μ s (TIA-968-A, 10/160 μ s voltage wave shape)
5/310 μ s (ITU-T K.44, 10/700 μ s voltage wave shape used in K.20/21/45)
10/560 μ s (TIA-968-A, 10/560 μ s voltage wave shape)
10/1000 μ s (GR-1089-CORE, 10/1000 μ s voltage wave shape)
I PPSM
± 500
± 200
± 150
± 100
± 100
A
Non-repetitive peak on-state current (see Notes 1, 2 and 3)
20 ms, 50 Hz (full sine wave)
1000 s, 50 Hz
Junction temperature
Storage temperature range
I TSM
T J
T stg
30
2.1
-40 to +150
-65 to +150
A
° C
° C
NOTES: 1. Initially the device must be in thermal equilibrium with T J = 25 ° C.
2. The surge may be repeated after the device returns to its initial conditions.
3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths.
Electrical Characteristics, T A = 25 °C (Unless Otherwise Noted)
Parameter
Test Conditions
Min
Typ
Max
Unit
I DRM
V (BO)
V (BO)
I (BO)
V T
I H
Repetitive peak off-state current
Breakover voltage
Impulse breakover voltage
Breakover current
On-state voltage
Holding current
V D = V DRM
dv/dt = ± 250 V/ms, R SOURCE = 300 Ω
dv/dt ≤ ± 1000 V/ μ s, Linear voltage ramp,
Maximum ramp value = ± 500 V
di/dt = ± 10 A/ μ s, Linear current ramp,
Maximum ramp value = ± 10 A
dv/dt = ± 250 V/ms, R SOURCE = 300 Ω
I T = ± 5 A,t w = 100 μ s
I T = ± 5 A, di/dt = ± 30 mA/ms
T A = 25 ° C
T A = 85 ° C
'4C115H3BJ
'4C125H3BJ
'4C145H3BJ
'4C165H3BJ
'4C180H3BJ
'4C220H3BJ
'4C250H3BJ
'4C290H3BJ
'4C350H3BJ
'4C115H3BJ
'4C125H3BJ
'4C145H3BJ
'4C165H3BJ
'4C180H3BJ
'4C220H3BJ
'4C250H3BJ
'4C290H3BJ
'4C350H3BJ
± 150
± 5
± 10
± 115
± 125
± 145
± 165
± 180
± 220
± 250
± 290
± 350
± 125
± 135
± 155
± 175
± 190
± 230
± 260
± 300
± 360
± 600
± 3
± 600
μ A
V
V
mA
V
mA
'4C115H3BJ
'4C125H3BJ
'4C145H3BJ
'4C165H3BJ
50
C O
Off-state capacitance
f = 1 MHz, V d = 1 V rms, V D = -2 V
'4C180H3BJ
'4C220H3BJ
'4C250H3BJ
45
pF
'4C290H3BJ
'4C350H3BJ
40
SEPTEMBER 2004 – REVISED JANUARY 2010
Speci?cations are subject to change without notice.
Customers should verify actual device performance in their speci?c applications.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TISP4C180H3BJ | 制造商:BOURNS 制造商全称:Bourns Electronic Solutions 功能描述:LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP4C180H3BJR-S | 功能描述:硅对称二端开关元件 145Volt RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TISP4C220H3BJ | 制造商:BOURNS 制造商全称:Bourns Electronic Solutions 功能描述:LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP4C220H3BJR-S | 功能描述:硅对称二端开关元件 VDRM 180 RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TISP4C250H3BJ | 制造商:BOURNS 制造商全称:Bourns Electronic Solutions 功能描述:LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
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