参数资料
| 型号： | TISP5070H3BJR |
| 厂商： | Bourns Inc. |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | SURGE SUPP -58V UNIDIR DO-214AA |
| 标准包装： | 3,000 |
| 电压 - 击穿： | 70V |
| 电压 - 断路： | 58V |
| 电压 - 导通状态： | 3V |
| 电流 - 峰值脉冲(8 x 20µs)： | 300A |
| 电流 - 峰值脉冲(10 x 1000µs)： | 100A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 1 |
| 电容： | 300pF |
| 封装/外壳： | DO-214AA，SMB |
| 包装： | 带卷 (TR) |
TISP5070H3BJ THRU TISP5190H3BJ
FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR
OVERVOLTAGE PROTECTORS
TISP5xxxH3BJ Overvoltage Protector Series
Analogue Line Card and ISDN Protection
- Analogue SLIC
- ISDN U Interface
- ISDN Power Supply
SMB Package (Top View)
8 kV 10/700, 200 A 5/310 ITU-T K.20/21/45 rating
Ion-Implanted Breakdown Region
- Precise and Stable Voltage
Low Voltage Overshoot under Surge
A 1
2 K
MD5UFCAB
Device Name
TISP5070H3BJ
TISP5080H3BJ
TISP5095H3BJ
TISP5110H3BJ
TISP5115H3BJ
V DRM
V
-58
-65
-75
-80
-90
V (BO)
V
-70
-80
-95
-110
-115
Device Symbol
K
TISP5150H3BJ
TISP5190H3BJ
-120
-160
-150
-190
A
SD5XAD
Rated for International Surge Wave Shapes
Wave Shape
Standard
I PPSM
A
2/10
8/20
10/160
10/700
10/560
10/1000
GR-1089-CORE
ANSI C62.41
TIA-968-A
ITU-T K.20/21/45
TIA-968-A
GR-1089-CORE
500
300
250
200
160
100
.............................................. UL Recognized Component
Description
These devices are designed to limit overvoltages on the telephone and data lines. Overvoltages are normally caused by a.c. power system or
lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is
typically used for the protection of ISDN power supply feeds. Two devices, one for the Ring output and the other for the Tip output, will provide
protection for single supply analogue SLICs. A combination of three devices will give a low capacitance protector network for the 3-point
protection of ISDN lines.
The protector consists of a voltage-triggered unidirectional thyristor with an anti-parallel diode. Negative overvoltages are initially clipped by
breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-
voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current
helps prevent d.c. latchup as the diverted current subsides. Positive overvoltages are limited by the conduction of the anti-parallel diode.
How to Order
Device
Package
Carrier
Order As
Marking
Code
Std.
Quantity
TISP5xxxH3BJ
BJ (J-Bend Embossed
DO-214AA/SMB) Tape Reeled
TISP5xxxH3BJ R-S
5xxxH3
3000
Insert xxx value corresponding to protection voltages of 070, 080, 110, 115 and 150.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
JANUARY 1998 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TISP5070H3BJR-S | 功能描述:硅对称二端开关元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TISP5080H3BJ | 制造商:BOURNS 制造商全称:Bourns Electronic Solutions 功能描述:FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP5080H3BJR | 功能描述:硅对称二端开关元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TISP5080H3BJR-S | 功能描述:硅对称二端开关元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TISP5095H3BJ | 制造商:BOURNS 制造商全称:Bourns Electronic Solutions 功能描述:FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
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