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参数资料
| 型号： | TISP61089BDR-S |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | TISP61089B High Voltage Ringing SLIC Protector |
| 中文描述： | TISP61089B高压振铃用户接口保护 |
| 文件页数： | 8/22页 |
| 文件大小： | 411K |
| 代理商： | TISP61089BDR-S |
OCTOBER 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61089B High Voltage Ringing SLIC Protector
Gated Protectors (Continued)
SLICs have become more sophisticated. To minimize power consumption, some designs automatically adjust the driver supply voltage to a
value that is just sufficient to drive the required line current. For short lines, the supply voltage would be set low, but for long lines, a higher
supply voltage would be generated to drive sufficient line current. The optimum protection for this type of SLIC would be given by a protection
voltage which tracks the SLIC supply voltage. This can be achieved by connecting the protection thyristor gate to the SLIC V
BATH
supply,
Figure 6. This gated (programmable) protection arrangement minimizes the voltage stress on the SLIC, no matter what value of supply voltage.
Figure 6. TISP61089B Buffered Gate Protector (‘1089 Section 4.5.12 Testing)
R1
40
RING
WIRE
TIP
WIRE
SLIC
TISP61089B
V
BATH
C1
220 nF
AI6XCC
600
600
A.C.
GENERATOR
0 - 600 V r.m.s.
SWITCHING MODE
POWER SUPPLY
I
SLIC
GENERATOR
SOURCE
RESISTANCE
I
G
C2
D1
Tx
R2
40
V
BATL
I
BATH
Figure 7. Negative Overvoltage Condition
I
G
Th5
SLIC
SLIC
PROTECTOR
I
K
AI6XAHB
V
BATH
TISP
61089B
C1
220 nF
Figure 8. Positive Overvoltage Condition
Th5
SLIC
V
BATH
SLIC
PROTECTOR
TISP
61089B
C1
220 nF
I
F
AI6XAIB
Operation of Gated Protectors
Figure 7 and Figure 8 show how the TISP61089B limits negative and positive overvoltages. Positive overvoltages (Figure 8) are clipped by the
antiparallel diode of Th5 and the resulting current is diverted to ground. Negative overvoltages (Figure 7) are initially clipped close to the SLIC
negative supply rail value (V
BATH
). If sufficient current is available from the overvoltage, then Th5 will switch into a low voltage on-state
condition. As the overvoltage subsides the high holding current of Th5 prevents d.c. latchup. The protection voltage will be the sum of the gate
supply (V
BATH
) and the peak gate-cathode voltage (V
GK(BO)
). The protection voltage will be increased if there is a long connection between the
gate decoupling capacitor, C1, and the gate terminal. During the initial rise of a fast impulse, the gate current (I
G
) is the same as the cathode
current (I
K
). Rates of 80 A/
μ
s can cause inductive voltages of 0.8 V in 2.5 cm of printed wiring track. To minimize this inductive voltage increase of
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| TISP61089BDR-T | 功能描述:SCR PROTECTOR - PROGRAMMABLE SLIC PROTECT RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089BDS | 制造商:Bourns Inc 功能描述: |
| TISP61089BD-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089BGDR-S | 功能描述:PROTECTOR PROGRAMMABLE SLIC RoHS:是 类别:过电压，电流，温度装置 >> TVS - 晶闸管 系列:- 产品变化通告:Product Discontinuation 19/Jul/2012 标准包装:2,500 系列:- 电压 - 击穿:400V 电压 - 断路:320V 电压 - 导通状态:4V 电流 - 峰值脉冲(8 x 20µs):250A 电流 - 峰值脉冲(10 x 1000µs):80A 电流 - 保持 (Ih):150mA 元件数:1 电容:29pF 封装/外壳:DO-214AA，SMB 包装:带卷 (TR) |
| TISP61089BSDR-S | 功能描述:SCR PROTECTOR - QUAD PROGRAMMABLE RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
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