参数资料
| 型号： | TISP61089DR-S |
| 厂商： | Bourns Inc. |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | SURGE PROT THYRIST 75V NEG SLIC |
| 产品培训模块： | ESD Protection Products |
| 产品变化通告： | Wire Color Change May 2008 |
| 产品目录绘图： | TISP61089 Pin Out TISP61089 Schematic |
| 标准包装： | 1 |
| 电压 - 击穿： | 64V |
| 电压 - 断路： | 100V |
| 电流 - 峰值脉冲(10 x 1000µs)： | 30A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 2 |
| 电容： | 100pF |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 标准包装 |
| 产品目录页面： | 2379 (CN2011-ZH PDF) |
| 其它名称： | TISP61089DR-SDKR |
TISP61089 Gated Protector Series
Description
These ‘61089 parts are all dual forward-conducting buffered p-gate thyristor (SCR) overvoltage protectors. They are designed to protect
monolithic SLICs (Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and
induction. The ‘61089 limits voltages that exceed the SLIC supply rail voltage. The ‘61089 parameters are specified to allow equipment
compliance with Telcordia (formally Bellcore) GR-1089-CORE and ITU-T recommendations K.20, K.21 and K.45.
The SLIC line driver section is typically powered from 0 V (ground) and a negative (battery) voltage. The protector gate is connected to this
negative supply. This references the protection (clipping) voltage to the negative supply voltage. The protection voltage will then track the
negative supply voltage and the overvoltage stress on the SLIC is minimized.
Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially clipped close to the SLIC
negative supply rail value. If sufficient current is available from the overvoltage, then the protector SCR will switch into a low voltage on-state
condition. As the overvoltage subsides the high holding current of ‘61089 SCR helps prevent d.c. latchup.
The ‘61089 is intended to be used with a series resistance of at least 25 ? and a suitable overcurrent function for Telcordia compliance. Power
fault conditions require a series overcurrent element which either interrupts or reduces the circuit current before the ‘61089 current rating is
exceeded. For equipment compliant to ITU-T recommendations K.20 or K.21 or K.45 only, the series resistor value is set by the coordination
requirements. For coordination with a 400 V limit GDT, a minimum series resistor value of 10 ? is recommended.
The ‘61089 buffered gate design reduces the loading on the SLIC supply during overvoltages caused by power cross and induction. The
regular pin-out for surface mount and through-hole packages is a feed through configuration. Connection to the SLIC is made via the ‘61089,
Ring through pins 4 - 5 and Tip through pins 1 - 8. A non-feed-through surface mount (D) package is available. This shunt (SD) version pin-out
does not make duplicate connections to pin 5 and pin 8 which increases package creepage distance from ground of the other connections
from about 0.7 mm to over 3 mm. High voltage ringing SLICs, with battery voltages below -100 V and down to -155 V, can be protected by the
TISP61089B device. Details of this device are in the TISP61089B data sheet.
Absolute Maximum Ratings, -40 ° C ≤ TJ ≤ 85 ° C (Unless Otherwise Noted)
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage, V GK = 0
Repetitive peak gate-cathode voltage, V KA = 0
61089
‘61089A
61089
‘61089A
V DRM
V GKRM
-100
-120
-85
-120
V
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
10/1000 μ s (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4)
30
5/320 μ s (ITU-T K.20, K.21& K.45, K.44 open-circuit voltage wave shape 10/700 μ s)
1.2/50 μ s (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4)
2/10 μ s (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4)
I PPSM
40
100
120
A
Non-repetitive peak on-state current, V GG = -75 V, 50 Hz to 60 Hz (see Notes 1 and 2)
0.1 s
11
1s
5s
300 s
900 s
Non-repetitive peak gate current, 1/2 μ s pulse, cathodes commoned (see Notes 1 and 2)
Operating free-air temperature range
Junction temperature
Storage temperature range
I TSM
I GSM
T A
T J
T stg
4.8
2.7
0.95
0.93
+40
-40 to +85
-40 to +150
-40 to +150
A
A
° C
° C
° C
NOTES: 1. Initially the protector must be in thermal equilibrium with -40 ° C ≤ T J ≤ 85 ° C. The surge may be repeated after the device returns
to its initial conditions. Gate voltage ranges are -20 V to -75 V for the ‘61089 and -20 V to -100 V for the ‘61089A.
2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both
terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice
the rated current value of an individual terminal pair). Above 85 ° C, derate linearly to zero at 150 ° C lead temperature.
NOVEMBER 1995 - REVISED JULY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TISP61089DS | 制造商:Bourns Inc 功能描述: |
| TISP61089D-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089HDM | 制造商:BOURNS 制造商全称:Bourns Electronic Solutions 功能描述:Overvoltage Protector |
| TISP61089HDM_07 | 制造商:BOURNS 制造商全称:Bourns Electronic Solutions 功能描述:Overvoltage Protector |
| TISP61089HDMR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
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