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参数资料
| 型号： | TISP6L7591DR |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| 中文描述： | 双远期导电的P -可编程门晶闸管过压保护 |
| 文件页数： | 3/7页 |
| 文件大小： | 227K |
| 代理商： | TISP6L7591DR |
MAY 2002 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Parameter Measurement Information
TISP6L7591 SLIC Protector
Figure 1. Typical Voltage-Current Characteristic of the SLIC Protector
Unless Otherwise Noted, All Voltages are Referenced to the Anode
-v
V
R
I
H
I
T
V
ON
I
TSM
I
PP
V
SGL
I
R
Quadrant I
Forward
Conduction
Characteristic
+v
+i
I
P
V
F
I
TSM
I
PP
-i
Quadrant III
Switching
Characteristic
PM6XAAZ
Letter Symbol Definitions
Symbol
I
H
I
GT
I
P
I
PP
I
RG
I
T
I
R
V
F
V
FP
V
T
V
SGL
V
ON
V
R
C
off
Parameter
Thyristor holding current
Gate trigger current into V
S
pin
Pulse current
Peak pulse current
Reverse current V
S
to TIP or RING
TIP or RING current when thyristor is on
Reverse current, TIP or RING to GND
Forward voltage, TIP or RING to GND
Peak forward voltage, TIP or RING to GND
Trip voltage, TIP or RING to V
S
Dynamic trip voltage, TIP or RING to V
S
Thyristor on voltage at I
T
TIP or RING voltage when thyristor is off
Off-state capacitance, TIP or RING to Ground
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TISP6L7591DR-S | 功能描述:SCR DUAL P GATE FORWARD CONDUCTING RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP6NTP2A | 制造商:BOURNS 制造商全称:Bourns Electronic Solutions 功能描述:QUAD FORWARD-CONDUCTING BUFFERED P-GATE THYRISTORS |
| TISP6NTP2A_08 | 制造商:BOURNS 制造商全称:Bourns Electronic Solutions 功能描述:QUAD FORWARD-CONDUCTING BUFFERED P-GATE THYRISTORS |
| TISP6NTP2AD | 功能描述:SCR Quad Buffered PGate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP6NTP2ADR | 功能描述:SCR Quad Buffered PGate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
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