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参数资料
| 型号： | TISP7082F3DR |
| 厂商： | BOURNS INC |
| 元件分类： | 浪涌电流限制器 |
| 英文描述： | 82 V, 4.3 A, SILICON SURGE PROTECTOR, MS-012AA |
| 封装： | SOP-8 |
| 文件页数： | 9/16页 |
| 文件大小： | 472K |
| 代理商： | TISP7082F3DR |
MARCH 1994 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Description (continued)
TISP70xxF3 (LV) Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
The high crowbar holding current prevents d.c. latchup as the diverted current subsides. These protectors are guaranteed to voltage limit and
withstand the listed lightning surges in both polarities.
These low voltage devices are guaranteed to suppress and withstand the listed international lightning surges on any terminal pair. Nine similar
devices with working voltages from 100 V to 275 V are detailed in the TISP7125F3 thru TISP7380F3 data sheet.
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage, 0 °C < TA < 70 °C
‘7072F3
‘7082F3
VDRM
58
66
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
IPPSM
A
1/2 (Gas tube differential transient, 1/2 voltage wave shape)
240
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
85
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 resistor)
45
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
80
10/160 (FCC Part 68, 10/160 voltage wave shape)
65
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
60
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)
50
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
50
5/320 (FCC Part 68, 9/720 voltage wave shape, single)
50
10/560 (FCC Part 68, 10/560 voltage wave shape)
45
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
40
Non-repetitive peak on-state current, 0 °C < TA < 70 °C (see Notes 1 and 3)
50 Hz,
1 s
D Package
SL Package
ITSM
4.3
7.1
A
Initial rate of rise of on-state current,
Linear current ramp, Maximum ramp value < 38 A
diT/dt
250
A/s
Junction temperature
TJ
-65 to +150
°C
Storage temperature range
Tstg
-65 to +150
°C
NOTES: 1. Initially, t he TISP device must be in thermal equilibrium at the specified TA. The surge may be repeated after the TISP
device
i
returns to its nitial conditions. The rated current values may be applied singly either to the R to G or to the T to G or to the T
Additionally, both R to G and T to G may have their rated current values applied simultaneously (in this case
current will be twice the above rated current values).
2. See Thermal Information for derated IPPSM values 0 °C < TA < 70 °C and Applications Information for details on wave shapes.
3. Above 70 °C, derate ITSM linearly to zero at 150 °C lead temperature.
to R terminals.
.
the total G terminal
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TISP7082F3DR-S | 功能描述:硅对称二端开关元件 Low Volt Triple Elmt Bidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TISP7082F3D-S | 功能描述:硅对称二端开关元件 Low Volt Triple Elmt Bidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TISP7082F3P | 功能描述:硅对称二端开关元件 Low Volt Triple Elmt Bidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TISP7082F3PS | 制造商:Bourns Inc 功能描述: |
| TISP7082F3P-S | 功能描述:硅对称二端开关元件 Low Volt Triple Elmt Bidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
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