参数资料
型号: TISP7260F3DR
厂商: Bourns Inc.
文件页数: 13/19页
文件大小: 0K
描述: SURGE SUPP 200V BIDIR 8-SOIC
标准包装: 2,500
电压 - 击穿: 260V
电压 - 断路: 200V
电压 - 导通状态: 5V
电流 - 峰值脉冲(8 x 20µs): 175A
电流 - 峰值脉冲(10 x 1000µs): 45A
电流 - 保持 (Ih): 150mA
元件数: 3
电容: 39pF
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
包装: 带卷 (TR)
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Thermal Information
Rating
Symbol
Value
Unit
Non-repetitive peak on-state pulse current, 0 ° C < T A < 70 ° C (see Notes 5, 6 and 7)
1/2 (Gas tube differential transient, 1/2 voltage wave shape)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 ? resistor)
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
320
175
90
150
10/160 (FCC Part 68, 10/160 voltage wave shape)
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, dual)
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
5/320 (FCC Part 68, 9/720 voltage wave shape)
10/560 (FCC Part 68, 10/560 voltage wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
I PPSM
90
70
65
65
65
45
40
A
NOTES: 5. Initially, the TISP device must be in thermal equilibrium at the specified T A . The impulse may be repeated after the TISP ? device
?
returns to its initial conditions. The rated current values may be applied either to the R to G or to the T to G or to the T to R
terminals. Additionally, both R to G and T to G may have their rated current values applied simultaneously (In this case the total
G terminal current will be twice the above rated current values).
6. See Applications Information for details on wave shapes.
7. Above 70 ° C, derate I PPSM linearly to zero at 150 ° C lead temperature.
MARCH 1994 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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