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| 型号： | TISP83121D-S |
| 厂商： | BOURNS INC |
| 元件分类： | 浪涌电流限制器 |
| 英文描述： | 22 A, SILICON SURGE PROTECTOR |
| 封装： | ROHS COMPLIANT, SOIC-8 |
| 文件页数： | 1/5页 |
| 文件大小： | 180K |
| 代理商： | TISP83121D-S |
FEBRUARY 1999 – REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP83121D Unidirectional P & N-Gate Protector
TISP83121D
DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR
Device Symbol
Overvoltage Protection for Dual-Voltage Ringing SLICs
– Programmable Protection Configurations up to
±100 V
– Typically 5 Lines Protected by:
Two TISP83121D + Diode Steering Networks
High Surge Current
– 150 A, 10/1000
s
– 250 A, 10/700
s
– 500 A, 8/20
s
Pin Compatible with the LCP3121
– 50 % more surge current
– Functional Replacement in Diode Steering Applications
Small Outline Surface Mount Package
How To Order
8-SOIC Package (Top View)
Description
The TISP83121D is a dual-gate reverse-blocking unidirectional
thyristor designed for the protection of dual-voltage ringing SLICs
(Subscriber Line Interface Circuits) against overvoltages on the
telephone line caused by lightning, a.c. power contact and
induction.
The device chip is a four-layer NPNP silicon thyristor structure
which has an electrode connection to every layer. For negative
overvoltage protection the TISP83121D is used in a common anode
configuration with the voltage to be limited applied to the cathode
(K) terminal and the negative reference potential applied to the gate
1 (G1) terminal. For positive overvoltage protection the TISP83121D
is used in a common cathode configuration with the voltage to be
limited applied to the anode (A) terminal and the positive reference
potential applied to the gate 2 (G2) terminal.
MD6XAYB
1
2
3
4
5
6
7
8
K
A
K
G1
G2
For operation at the rated current values connect pins 1, 4, 5
and 8 together.
K
G1
G2
SD6XAKA
A
The TISP83121D is a unidirectional protector and to prevent reverse bias, requires the use of a series diode between the protected line
conductor and the protector. Further, the gate reference supply voltage requires an appropriately poled series diode to prevent the supply from
being shorted when the TISP83121D crowbars.
Under low level power cross conditions the TISP83121D gate current will charge the gate reference supply. If the reference supply cannot
absorb the charging current its potential will increase, possibly to damaging levels. To avoid excessive voltage levels a clamp (zener or
avalanche breakdown diode) may be added in shunt with the supply. Alternatively, a grounded collector emitter-follower may be used to
reduce the charging current by the transistor’s HFE value.
This monolithic protection device is made with an ion-implanted epitaxial-planar technology to give a consistent protection performance and
be virtually transparent to the system in normal operation.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Device
Package
Carrier
TISP83121 D (8-pin Small-Outline)
R (Embossed Tape Reeled)
(Tube)
TISP83121DR-S
TISP83121D-S
Order As
............................................... UL Recognized Component
*R
oH
S
CO
M
PL
IA
NT
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