参数资料
| 型号： | TISP9110LDMR-S |
| 厂商： | Bourns Inc. |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | SURGE PROT THYRIST NEG/POS SLIC |
| 产品培训模块： | ESD Protection Products |
| 产品变化通告： | Gold to Copper Wire Change April 2009 TISP9110LDMR-S Materials Change 10/Jul/2012 |
| 标准包装： | 1 |
| 电压 - 箝位： | 15V |
| 技术： | 混合技术 |
| 电路数： | 2 |
| 应用： | SLIC |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 标准包装 |
| 产品目录页面： | 2379 (CN2011-ZH PDF) |
| 其它名称： | TISP9110LDMR-SDKR |
TISP9110LDM
INTEGRATED COMPLEMENTARY BUFFERED-GATE SCRS
FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION
TISP9110LDM Overvoltage Protector
High Performance Protection for SLICs with +ve and -ve
Battery Supplies
8-SOIC (210 mil) Package (Top View)
– Wide -110 V to +110 V Programming Range
– Low 5 mA max. Gate Triggering Current
(Tip or Ring) Line
1
8
NC
– Dynamic Protection Performance Specified for
International Surge Waveshapes
(-V (BAT) )
(+V (BAT) )
G1
G2
2
3
7
6
Ground
Ground
Applications include:
– Wireless Local Loop
(Ring or Tip) Line
4
5
NC
– Access Equipment
– Regenerated POTS
– VOIP Applications
NC - No internal connection
Terminal typical application names shown in
parenthesis
MD-8SOIC(210)-003-a
Rated for International Surge Wave Shapes
Wave Shape
2/10
10/700
10/1000
Standard
GR-1089-CORE
ITU-T K.20/21/45
GR-1089-CORE
I PPSM
A
100
45
30
Device Symbol
Line
............................................... UL Recognized Component
Description
The TISP9110LDM is a programmable overvoltage protection
device designed to protect modern dual polarity supply rail
ringing SLICs (Subscriber Line Interface Circuits) against
overvoltages on the telephone line. Overvoltages can be caused
by lightning, a.c. power contact and induction. Four separate
protection structures are used; two positive and two negative to
provide optimum protection during Metallic (Differential) and
Longitudinal (Common Mode) protection conditions in both
polarities. Dynamic protection performance is specified under
typical international surge waveforms from Telcordia GR-1089-
CORE, ITU-T K.44 and YD/T 950.
G1
Ground
Line
G2
SD-TISP9-001-a
The TISP9110LDM is programmed by connecting the G1 and G2
gate terminals to the negative (-V (BAT) ) and positive (+V (BAT) )
SLIC Battery supplies respectively. This creates a protector operating at typically +1.4 V above +V (BAT) and -1.4 V below -V (BAT) under a.c.
power induction and power contact conditions. The protector gate circuitry incorporates 4 separate buffer transistors designed to provide
independent control for each protection element. The gate buffer transistors minimize supply regulation issues by reducing the gate current
drawn to around 5 mA, while the high voltage base emitter structures eliminate the need for expensive reverse bias protection gate diodes.
The TISP9110LDM is rated for common surges contained in regulatory requirements such as ITU-T K.20, K.45, Telcordia GR-1089-CORE,
YD/T 950. By the use of appropriate overcurrent protection devices such as the Bourns ? Multifuse ? and Telefuse ? devices, circuits can be
designed to comply with modern telecom standards.
How To Order
Device
TISP9110LDM
Package
8-SOIC (210 mil)
Carrier
Embossed Tape Reeled
Order As
TISP9110LDMR-S
Marking Code
9110L
Standard Quantity
2000
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
AUGUST 2004 – REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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相关代理商/技术参数 |
参数描述 |
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| TISP9110LDMS | 功能描述:SCR OverVolt Protector RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP9110MDMR-S | 制造商:Bourns Inc 功能描述: 制造商:Bourns Inc 功能描述:SURGE PROT THYRIST NEG/POS SLIC 制造商:Bourns Inc 功能描述:SCRs Dual Polarity SLIC 150/80/50A |
| TISPA79R241DR | 功能描述:硅对称二端开关元件 RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TISPA79R241DR-S | 功能描述:硅对称二端开关元件 RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TISPL758LF3DR | 功能描述:硅对称二端开关元件 RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
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