参数资料
型号: TL494BD
厂商: ON Semiconductor
文件页数: 2/14页
文件大小: 0K
描述: IC REG CTRLR PWM VM 16-SOIC
产品变化通告: Product Discontinuation 27/Jun/2007
标准包装: 48
系列: SWITCHMODE™
PWM 型: 电压模式
输出数: 1
频率 - 最大: 200kHz
占空比: 50%
电源电压: 7 V ~ 40 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 125°C
封装/外壳: 16-SOIC(0.154",3.90mm 宽)
包装: 管件
TL494, NCV494
RECOMMENDED OPERATING CONDITIONS
Characteristics
Power Supply Voltage
Collector Output Voltage
Collector Output Current (Each transistor)
Amplified Input Voltage
Current Into Feedback Terminal
Reference Output Current
Timing Resistor
Timing Capacitor
Oscillator Frequency
Symbol
V CC
V C1 , V C2
I C1 , I C2
V in
l fb
l ref
R T
C T
f osc
Min
7.0
?
?
?0.3
?
?
1.8
0.0047
1.0
Typ
15
30
?
?
?
?
30
0.001
40
Max
40
40
200
V CC ? 2.0
0.3
10
500
10
200
Unit
V
V
mA
V
mA
mA
k W
m F
kHz
ELECTRICAL CHARACTERISTICS (V CC = 15 V, C T = 0.01 m F, R T = 12 k W , unless otherwise noted.)
For typical values T A = 25 ° C, for min/max values T A is the operating ambient temperature range that applies, unless otherwise noted.
Characteristics
Symbol
Min
Typ
Max
Unit
REFERENCE SECTION
Reference Voltage (I O = 1.0 mA)
Line Regulation (V CC = 7.0 V to 40 V)
Load Regulation (I O = 1.0 mA to 10 mA)
Short Circuit Output Current (V ref = 0 V)
V ref
Reg line
Reg load
I SC
4.75
?
?
15
5.0
2.0
3.0
35
5.25
25
15
75
V
mV
mV
mA
OUTPUT SECTION
Collector Off?State Current
I C(off)
?
2.0
100
m A
(V CC = 40 V, V CE = 40 V)
Emitter Off?State Current
I E(off)
?
?
?100
m A
V CC = 40 V, V C = 40 V, V E = 0 V)
Collector?Emitter Saturation Voltage (Note 2)
V
Common?Emitter (V E = 0 V, I C = 200 mA)
Emitter?Follower (V C = 15 V, I E = ?200 mA)
V sat(C)
V sat(E)
?
?
1.1
1.5
1.3
2.5
Output Control Pin Current
Low State (V OC v 0.4 V)
High State (V OC = V ref )
I OCL
I OCH
?
?
10
0.2
?
3.5
m A
mA
Output Voltage Rise Time
t r
ns
Common?Emitter (See Figure 12)
Emitter?Follower (See Figure 13)
Output Voltage Fall Time
Common?Emitter (See Figure 12)
Emitter?Follower (See Figure 13)
t f
?
?
?
?
100
100
25
40
200
200
100
100
ns
2. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient temperature as possible.
http://onsemi.com
2
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