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| 型号： | TLC083IDG4 |
| 厂商： | Texas Instruments, Inc. |
| 英文描述： | FAMILY OF WIDE-BANDWIDTH HIGH-OUPTUP-DRIVE SINGLE SUPPLY OPERATIONAL AMPLIFIERS |
| 中文描述： | 家庭宽带宽，OUPTUP -驱动单电源运算放大器 |
| 文件页数： | 24/51页 |
| 文件大小： | 1851K |
| 代理商： | TLC083IDG4 |
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SLOS254E JUNE 1999 REVISED APRIL 2006
24
WWW.TI.COM
APPLICATION INFORMATION
general PowerPAD design considerations (continued)
TJ = 150
°
C
4
3
2
0
55 40
10
TA Free-Air Temperature
°
C
20 35
M
5
6
MAXIMUM POWER DISSIPATION
vs
FREE-AIR TEMPERATURE
7
65
95
125
1
DGN Package
Low-K Test PCB
θ
JA = 52.3
°
C/W
SOT-23 Package
Low-K Test PCB
θ
JA = 324
°
C/W
25
5
50
80
110
PWP Package
Low-K Test PCB
θ
JA = 29.7
°
C/W
SOIC Package
Low-K Test PCB
θ
JA = 176
°
C/W
PDIP Package
Low-K Test PCB
θ
JA = 104
°
C/W
NOTE A: Results are with no air flow and using JEDEC Standard Low-K test PCB.
Figure 53. Maximum Power Dissipation vs Free-Air Temperature
The next consideration is the package constraints. The two sources of heat within an amplifier are quiescent
power and output power. The designer should never forget about the quiescent heat generated within the
device, especially multi-amplifier devices. Because these devices have linear output stages (Class A-B), most
of the heat dissipation is at low output voltages with high output currents.
The other key factor when dealing with power dissipation is how the devices are mounted on the PCB. The
PowerPAD devices are extremely useful for heat dissipation. But, the device should always be soldered to a
copper plane to fully use the heat dissipation properties of the PowerPAD. The SOIC package, on the other
hand, is highly dependent on how it is mounted on the PCB. As more trace and copper area is placed around
the device,
θ
JA
decreases and the heat dissipation capability increases. The currents and voltages shown in
these graphs are for the total package. For the dual or quad amplifier packages, the sum of the RMS output
currents and voltages should be used to choose the proper package.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TLC083IDGQ | 功能描述:运算放大器 - 运放 Dual High-Output RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
| TLC083IDGQG4 | 功能描述:运算放大器 - 运放 Dual High-Output RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
| TLC083IDGQR | 制造商:TI 制造商全称:Texas Instruments 功能描述:FAMILY OF WIDE-BANDWIDTH HIGH-OUTPUT-DRIVE SINGLE SUPPLY OPERATIONAL AMPLIFIERS |
| TLC083IDGQRG4 | 制造商:TI 制造商全称:Texas Instruments 功能描述:FAMILY OF WIDE BANDWIDTH HIGH OUTPUT DRIVE SINGLE SUPPLY OPERATIONAL AMPLIFIERS |
| TLC083IDR | 制造商:Texas Instruments 功能描述: |
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