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| 型号： | TLE7810G |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 元件分类： | 模拟信号调理 |
| 英文描述： | SPECIALTY ANALOG CIRCUIT, PDSO28 |
| 封装： | GREEN, PLASTIC,SOP-28 |
| 文件页数： | 46/53页 |
| 文件大小： | 899K |
| 代理商： | TLE7810G |
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TLE7810G
Application Information
Data Sheet
50
Rev. 3.01, 2008-04-15
18.3
Flash Program Mode via LIN-Fast-Mode
For flash programming the transmission rate of the integrated LIN transceiver can be changed to maximum
115 kBaud via SPI command. A dedicated BROM routine of the XC866 takes care of periodically servicing the
watchdog during this LIN-Fast-Mode. Further details are available in the XC866 User’s Manual.
Figure 20
LIN Flash mode SPI command
18.4
Thermal Resistance
T
J = TA + (PD × RthJA)
(8)
T
J = Junction temperature [°C]
T
A = Ambient temperature [°C]
P
D = Total chip power dissipation [W]
P
INT = Chip internal power dissipation [W]
P
IO = Power dissipation caused by I/O currents [W]
R
thJA = Package thermal resistance [K/W]; junction-ambient
The total power dissipation can be calculated from:
P
D = PINT + PIO
(9)
18.5
ESD Tests
Tests for ESD robustness according to IEC61000-4-2 “gun test” (150pF, 330
Ω) have been performed. The results
and test condition are available in a test report.
15 14 13 12 11 10
8
9
7
6
5
4
3
2
0
1
Input Data
LSB
MSB
1
0
1
0
LIN FLASH mode on
0
1
0
LIN FLASH mode off
Table 15
ESD “GUN test”
Performed Test
Result
Unit
Remarks
ESD at pin LIN, VS, MON4 versus GND
≥ +8
kV
1)Positive pulse
ESD at pin LIN, VS, MON4 versus GND
≤ -8
kV
1)Negative pulse
1) ESD susceptibility “ESD GUN” according LIN EMC 1.3 Test Specification, Section 4.3. (IEC 61000-4-2) -Tested by external
test house (IBEE Zwickau, EMC Test report Nr. ).
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