参数资料
型号: TLP421F
厂商: Toshiba Corporation
英文描述: TOSHIBA Photocoupler GaAs IRed & Photo−Transistor
文件页数: 1/3页
文件大小: 111K
代理商: TLP421F
TLP421F
2002-09-25
1
TOSHIBA Photocoupler GaAs IRed & Photo
Transistor
TLP421F
Office Equipment
Household Appliances
Solid State Relays
Switching Power Supplies
Various Controllers
Signal Transmission Between Different Voltage Circuits
The TOSHIBA TLP421F consists of a silicone photo
transistor optically
coupled to a gallium arsenide infrared emitting diode in a four lead
plastic DIP (DIP4) with having high isolation voltage
(AC: 5kV
RMS
(min)).
Maximum rating and electrical characteristics are the same as TLP421
technical datasheet.
Collector
emitter voltage: 80V (min)
Current transfer ratio: 50% (min)
Rank GB: 100% (min)
Isolation voltage: 5000 V
rms
(min)
UL recognized: UL1577
BSI approved: BS EN60065: 1994
Approved no. 8411
BS EN60950: 1992
Approved no. 8412
SEMKO approved: EN60065, EN60950, EN60335
Approved no. 9910249 / 01
Pin Configurations
(top view)
1
2
3
4
1 : ANODE
2 : CATHODE
3 : EMITTER
4 : COLLECTOR
Unit in mm
TOSHIBA
11
5B202
Weight: 0.26 g
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