参数资料
型号: TLV2254(中文)
厂商: Texas Instruments, Inc.
英文描述: Quad LINCMOS Rail-To-Rail Micropower OP AMP(四路满电源幅度,低压微功耗运放)
中文描述: 四LINCMOS轨至轨微功率运算放大器(四路满电源幅度,低压微功耗运放)
文件页数: 2/39页
文件大小: 1029K
代理商: TLV2254(中文)
TLV2254, TLV2254A, TLV2254Y
Advanced LinCMOS
RAIL-TO-RAIL
VERY LOW POWER QUADRUPLE OPERATIONAL AMPLIFIERS
SLOS140A – DECEMBER 1994 – REVISED MAY 1996
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
description (continued)
The Advanced LinCMOS
process uses a silicon-gate technology to obtain input offset voltage stability with
temperature and time that far exceeds that obtainable using metal-gate technology. This technology also makes
possible input-impedance levels that meet or exceed levels offered by top-gate JFET and expensive
dielectric-isolated devices.
The TLV2254 and TLV2254A, exhibiting high input impedance and low noise, are excellent for small-signal
conditioning for high-impedance sources such as piezoelectric transducers. Because of the low
power-dissipation levels combined with 3-V operation, these devices work well in hand-held monitoring and
remote-sensing applications. In addition, the rail-to-rail output feature with single or split supplies makes these
devices excellent choices when interfacing directly to analog-to-digital converters (ADCs). All of these features,
combined with its temperature performance make the TLV2254 family ideal for remote pressure sensors,
temperature control, active voltage-resistive (VR) sensors, accelerometers, hand-held metering, and many
other applications.
The device inputs and outputs are designed to withstand a 100-mA surge current without sustaining latch-up.
In addition, internal ESD-protection circuits prevent functional failures up to 2000 V as tested under
MIL-STD-883C, Method 3015.2. Care should be exercised in handling these devices as exposure to ESD may
result in degradation of the device parametric performance. Additional care should be exercised to prevent
V
DD+
supply-line transients under powered conditions. Transients greater than 20-V can trigger the
ESD-protection structure, inducing a low-impedance path to V
DD–
/GND. Should this condition occur, the
sustained current supplied to the device must be limited to 100 mA or less. Failure to do so could result in a
latched condition and device failure.
1
2
3
4
5
6
7
14
13
12
11
10
9
8
1OUT
1IN–
1IN+
V
DD+
2IN+
2IN–
2OUT
4OUT
4IN–
4IN+
V
DD–
/GND
3IN+
3IN–
3OUT
TLV2254I, TLV2254AI . . . D OR N PACKAGE
TLV2254M, TLV2254AM . . . J OR W PACKAGE
(TOP VIEW)
TLV2254I, TLV2254AI . . . PW PACKAGE
(TOP VIEW)
1
14
8
7
4OUT
4IN –
4IN +
V
DD –
/GND
3IN +
3IN –
3OUT
1OUT
1IN –
1IN +
V
DD+
2IN +
2IN –
2OUT
3
2
1 20 19
9 10 11 12 13
4
5
6
7
8
18
17
16
15
14
4IN+
NC
V
DD–
/GND
NC
3IN+
1IN+
NC
V
DD+
NC
2IN+
1
1
N
3
3
4
2
N
4
TLV2254M, TLV2254AM . . . FK PACKAGE
(TOP VIEW)
2
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相关代理商/技术参数
参数描述
TLV2254AID 功能描述:运算放大器 - 运放 LiNCMOS R/R RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比(最小值):63 dB 输入补偿电压:1 mV 输入偏流(最大值):10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel
TLV2254AIDG4 功能描述:运算放大器 - 运放 Quad Low-Voltage Rail-to-Rail RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比(最小值):63 dB 输入补偿电压:1 mV 输入偏流(最大值):10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel
TLV2254AIDR 功能描述:运算放大器 - 运放 Quad Low-Voltage Rail-to-Rail RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比(最小值):63 dB 输入补偿电压:1 mV 输入偏流(最大值):10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel
TLV2254AIDRG4 功能描述:运算放大器 - 运放 Quad Low-Voltage Rail-to-Rail RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比(最小值):63 dB 输入补偿电压:1 mV 输入偏流(最大值):10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel
TLV2254AIN 功能描述:运算放大器 - 运放 LiNCMOS R/R RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比(最小值):63 dB 输入补偿电压:1 mV 输入偏流(最大值):10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel