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参数资料
| 型号： | TM20DA-M |
| 元件分类： | 晶闸管 |
| 英文描述： | 31.4 A, 400 V, SCR |
| 文件页数： | 3/5页 |
| 文件大小： | 66K |
| 代理商： | TM20DA-M |
Feb.1999
0
10
0
10
1
10
–1
10
–2
10
–3
10
–1
10
1
10
0
10
4
10
3
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2
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1
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3
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2
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1
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–1
10
70
50
30
20
7
5
3
2
0
100
500
200
300
400
10
1
100
0.5
7
5
3
2
7
5
3
2
7
5
3
2
1.5
2.5
3.5
4.5
Tj=125°C
7
5
3
2
7
5
3
2
7
5
3
2
3
2
7
5
3
2
7
5
3
2
4
7
5
4
VGT=3.0V
IGT=
50mA
IFGM
=2.0A
PGM=5.0W
VFGM=10V
VGD=0.25V
PG(AV)=
0.50W
Tj=
25°C
7
5
3
2
7
5
3
2
7
5
3
2
0.2
0.4
0.6
0.8
1.0
0
7
5
3
2
0
020
10
5
40
15
35
30
25
20
15
10
5
θ=30°
60°
120°
90°
180°
θ
360°
130
50
60
70
80
90
100
110
120
020
10
5
15
θ=30° 60° 90°
180°
120°
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
θ
360°
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
GATE CHARACTERISTICS
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(SINGLE PHASE HALFWAVE)
RATED SURGE (NON-REPETITIVE)
ON-STATE CURRENT
ON-ST
A
TE
CURRENT
(A)
SURGE
(NON-REPETITIVE)
ON-ST
A
TE
CURRENT
(A)
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
GA
TE
VOL
T
AGE
(V)
A
VERAGE
ON-ST
A
TE
POWER
DISSIP
A
TION
(W)
TRANSIENT
THERMAL
IMPEDANCE
(°
C/
W)
CASE
TEMPERA
TURE
(°
C)
TIME (s)
GATE CURRENT (mA)
AVERAGE ON-STATE CURRENT (A)
MITSUBISHI THYRISTOR MODULES
TM20DA-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
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|---|---|
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