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参数资料
| 型号： | TM400DZ-H |
| 厂商： | Powerex Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | SCR PHSE CTRL DL MOD 800V 400A |
| 其它有关文件： | SCR Module Selection Guide |
| 标准包装： | 1 |
| 结构： | 串联 - SCR/二极管 |
| SCR 数目，二极管： | 1 SCR，1 个二极管 |
| 电压 - 断路： | 800V |
| 电流 - 栅极触发电流 (Igt)（最大）： | 100mA |
| 电流 - 导通状态 (It (AV))（最大）： | 400A |
| 电流 - 导通状态 (It (RMS))（最大）： | 620A |
| 电流 - 非重复电涌，50、60Hz (Itsm)： | 8000A @ 60Hz |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 包装： | 散装 |
MITSUBISHI THYRISTOR MODULES
TM400DZ/CZ/PZ/UZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
V RRM
V RSM
V R (DC)
V DRM
V DSM
V D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
M
400
480
320
400
480
320
H
800
960
640
800
960
640
Voltage class
24
1200
1350
960
1200
1350
960
2H
1600
1700
1280
1600
1700
1280
Unit
V
V
V
V
V
V
Symbol
I T (RMS)
I T (AV)
I TSM
I 2t
di/dt
P GM
P G (AV)
V FGM
V RGM
I FGM
T j
T stg
V iso
—
—
Parameter
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
I 2t for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Conditions
Single-phase, half-wave 180 ° conduction, T C =66 ° C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
V D =1/2V DRM , I G =1.0A, T j =125 ° C
Charged part to case
Main terminal screw M8
Mounting screw M6
Typical value
Ratings
620
400
8000
2.7 × 10 5
200
10
3.0
10
5.0
4.0
–40~+125
–40~+125
2500
8.83~10.8
90~110
1.96~3.92
20~40
1100
Unit
A
A
A
A 2 s
A/ μ s
W
W
V
V
A
° C
° C
V
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS
Limits
Symbol
I RRM
I DRM
V TM
dv/dt
V GT
V GD
I GT
R th (j-c)
R th (c-f)
—
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Insulation resistance
Test conditions
T j =125 ° C, V RRM applied
T j =125 ° C, V DRM applied
T j =125 ° C, I TM =1200A, instantaneous meas.
T j =125 ° C, V D =2/3V DRM
T j =25 ° C, V D =6V, R L =2 ?
T j =125 ° C, V D =1/2V DRM
T j =25 ° C, V D =6V, R L =2 ?
Junction to case, per 1/2 module
Case to fin, conductive grease applied, per 1/2 module
Measured with a 500V megohmmeter between main terminal
and case
Min.
—
—
—
500
—
0.25
15
—
—
10
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
60
60
1.4
—
3.0
—
100
0.1
0.05
—
Unit
mA
mA
V
V/ μ s
V
V
mA
° C/ W
° C/ W
M ?
Feb.1999
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TM400DZ-M | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER GENERAL USE INSULATED TYPE |
| TM400-H | 制造商:POWEREX 制造商全称:Powerex Power Semiconductors 功能描述:HIGH POWER GENERAL USE INSULATED TYPE |
| TM400HA-24 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER GENERAL USE INSULATED TYPE |
| TM400HA-2H | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER GENERAL USE INSULATED TYPE |
| TM400HA-H | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER GENERAL USE INSULATED TYPE |
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