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参数资料
| 型号： | TM4EP72BJN-70 |
| 厂商： | Texas Instruments, Inc. |
| 英文描述： | EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
| 中文描述： | 扩展数据输出动态随机存储器模块 |
| 文件页数： | 10/22页 |
| 文件大小： | 354K |
| 代理商： | TM4EP72BJN-70 |
TM4EP64BJN, TM4EP64BPN, TM4EP64CJN, TM4EP64CPN 4194304 BY 64-BIT
TM4EP72BJN, TM4EP72BPN, TM4EP72CJN, TM4EP72CPN 4194304 BY 72-BIT
EXTENDED-DATA-OUT DYNAMIC RAMMODULES
SMMS682A – AUGUST 1997– REVISED MARCH 1998
10
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
electrical characteristics over recommended ranges of supply voltage and ambient temperature
(unless otherwise noted) (continued)
TM4EP72CxN
PARAMETER
TEST CONDITIONS
’4EP72CxN-50
MIN
’4EP72CxN-60
MIN
’4EP72CxN-70
MIN
UNIT
MAX
MAX
MAX
VOH
High-level
output
voltage
IOH = – 2 mA
LVTTL
2.4
2.4
2.4
V
IOH = – 100
μ
A
LVCMOS
VDD–0.2
VDD–0.2
VDD–0.2
VOL
Low-level
output
voltage
IOL = 2 mA
LVTTL
0.4
0.4
0.4
V
IOL = 100
μ
A
LVCMOS
0.2
0.2
0.2
II
Input current
(leakage)
VDD = 3.6 V,
All others = 0 V to VDD
VI = 0 V to 3.9 V,
±
20
±
20
±
20
μ
A
IO
Output
current
(leakage)
VDD = 3.6 V,
CASx high
VO = 0 V to VDD,
±
20
±
20
±
20
μ
A
ICC1§
Average
read- or
write-cycle
current
VDD = 3.6 V,
Minimum cycle
1620
1260
1080
mA
ICC2
Average
standby
current
VIH = 2 V (LVTTL),
After one memory cycle,
RASx and CASx high
36
36
36
mA
VIH = VDD – 0.2 V (LVCMOS),
After one memory cycle,
RASx and CASx high
18
18
18
mA
ICC3§
Average
refresh
current
(RASx-only
refresh
or CBR)
VDD = 3.6 V,
RASx cycling,
CASx high (RASx-only refresh),
RASx low after CASx low (CBR)
Minimum cycle,
1620
1260
1080
mA
ICC4
Average
EDO current
VDD = 3.6 V,
RASx low,
tHPC = MIN,
CASx cycling
1800
1620
1440
mA
For conditions shown as MIN/MAX, use the appropriate value specified in the timing requirements.
Measured with outputs open
§Measured with a maximum of one address change while RASx = VIL
Measured with a maximum of one address change during each EDO cycle, tHPC
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PDF描述 |
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| TM4EP72BPN-50 | EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
| TM4EP72BPN-60 | EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
| TM4EP72BPN-70 | EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
| TM4EP72CJN-50 | EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
| TM4EP72CJN-60 | EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TM4EP72BPN | 制造商:TI 制造商全称:Texas Instruments 功能描述:EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
| TM4EP72BPN-50 | 制造商:TI 制造商全称:Texas Instruments 功能描述:EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
| TM4EP72BPN-60 | 制造商:TI 制造商全称:Texas Instruments 功能描述:EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
| TM4EP72BPN-70 | 制造商:TI 制造商全称:Texas Instruments 功能描述:EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
| TM4EP72CJN | 制造商:TI 制造商全称:Texas Instruments 功能描述:EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
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