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参数资料
| 型号： | TM4EP72BPN-50 |
| 厂商： | Texas Instruments, Inc. |
| 英文描述： | EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
| 中文描述： | 扩展数据输出动态随机存储器模块 |
| 文件页数： | 15/22页 |
| 文件大小： | 354K |
| 代理商： | TM4EP72BPN-50 |
TM4EP64BJN, TM4EP64BPN, TM4EP64CJN, TM4EP64CPN 4194304 BY 64-BIT
TM4EP72BJN, TM4EP72BPN, TM4EP72CJN, TM4EP72CPN 4194304 BY 72-BIT
EXTENDED-DATA-OUT DYNAMIC RAMMODULES
SMMS682A – AUGUST 1997– REVISED MARCH 1998
15
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
serial presence detect
The serial presence detect (SPD) is contained in a 256-byte Serial EEPROM located on the module. The SPD
nonvolatile EEPROM contains various data such as module configuration, DRAM organization, and timing
parameters (see Table 1 through Table 4). Only the first 128 bytes are programmed by Texas Instruments, while
the remaining 128 bytes are available for customer use. Programming is done through an IIC bus using the clock
(SCL) and data (SDA) signals. All Texas Instruments modules comply with the current JEDEC SPD Standard.
See the Texas Instruments Serial Presence Detect Technical Reference(literature number SMMU001) for
further details.
SPD contents for the TM4EPxxxxN devices are listed in the following tables:
Table 1–TM4EP64BxN
Table 3–TM4EP72BxN
Table 2–TM4EP64CxN
Table 4–TM4EP72CxN
Table 1. Serial-Presence-Detect Data for the TM4EP64BxN
BYTE
NO.
FUNCTION DESCRIBED
’4EP64BxN-50
ITEM
’4EP64BxN-60
ITEM
’4EP64BxN-70
ITEM
DATA
DATA
DATA
0
Defines number of bytes
written into serial memory
during module manufacturing
128 bytes
80h
128 bytes
80h
128 bytes
80h
1
Total number of bytes of SPD
memory device
256 bytes
08h
256 bytes
08h
256 bytes
08h
2
Fundamental memory type
(FPM, EDO, SDRAM)
EDO
02h
EDO
02h
EDO
02h
3
Number of row addresses on
this assembly
10
0Ah
10
0Ah
10
0Ah
4
Number of column addresses
on this assembly
10
0Ah
10
0Ah
10
0Ah
5
Number of module banks on
this assembly
1 bank
01h
1 bank
01h
1 bank
01h
6
Data width of this assembly
64 bits
40h
64 bits
40h
64 bits
40h
7
Data width continuation
00h
00h
00h
8
Voltage interface standard of
this assembly
LVTTL
01h
LVTTL
01h
LVTTL
01h
9
RASx access time of module
tRAC = 50 ns
tRAC = 13 ns
32h
tRAC = 60 ns
tRAC = 15 ns
3Ch
tRAC = 70 ns
tRAC = 18 ns
46h
10
CASx access time of module
0Dh
0Fh
12h
11
DIMM configuration type
(non-parity, parity, ECC)
Non-parity
00h
Non-parity
00h
Non-parity
00h
12
Refresh rate/type
15.6
μ
s
x4
00h
15.6
μ
s
x4
00h
15.6
μ
s
x4
00h
13
DRAM width, primary DRAM
04h
04h
04h
14
Error-checking SDRAM data
width
N/A
00h
N/A
00h
N/A
00h
62
SPD revision
Rev. 1
01h
Rev. 1
01h
Rev. 1
01h
63
Checksum for bytes 0–62
36
24h
48
30h
61
3Dh
64–71
Manufacturer’s
code per JEP-106E
Manufacturing location
Manufacturer’s part number
Die revision code
PCB revision code
JEDEC
ID
97h
9700...00h
97h
9700...00h
97h
9700...00h
72
TBD
TBD
TBD
73–90
TBD
TBD
TBD
91
TBD
TBD
TBD
92
TBD
TBD
TBD
相关PDF资料 |
PDF描述 |
|---|---|
| TM4EP72BPN-60 | EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
| TM4EP72BPN-70 | EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
| TM4EP72CJN-50 | EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
| TM4EP72CJN-60 | EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
| TM4EP72CJN-70 | EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TM4EP72BPN-60 | 制造商:TI 制造商全称:Texas Instruments 功能描述:EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
| TM4EP72BPN-70 | 制造商:TI 制造商全称:Texas Instruments 功能描述:EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
| TM4EP72CJN | 制造商:TI 制造商全称:Texas Instruments 功能描述:EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
| TM4EP72CJN-50 | 制造商:TI 制造商全称:Texas Instruments 功能描述:EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
| TM4EP72CJN-60 | 制造商:TI 制造商全称:Texas Instruments 功能描述:EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
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