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参数资料
| 型号： | TMA166S-L |
| 厂商： | SANKEN ELECTRIC CO LTD |
| 元件分类： | 晶闸管 |
| 英文描述： | 600 V, 16 A, TRIAC, TO-220AB |
| 封装： | TO-220F, 3 PIN |
| 文件页数： | 6/12页 |
| 文件大小： | 268K |
| 代理商： | TMA166S-L |
Triac (Bidirectional Triode Thyristor)
TMA16xS
Series
3
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Off-State Leakage Current
IDRM
VD = VDRM, TJ = 125°C, RGREF =
∞ using test circuit 1
–
2.0
mA
VD = VDRM, TJ = 25°C, RGREF =
∞ using test circuit 1
–
100
μA
On-State Voltage
VTM
IT = 20 A, TJ = 25°C
–
1.45
V
Gate Trigger Voltage
VGT
Quadrant I: T2+, G+
VD = 12 V, RL = 20 Ω, TJ = 25°C
–
1.5
V
Quadrant II: T2+, G–
–
1.5
V
Quadrant III: T2–, G–
–
1.5
V
Gate Trigger Current
IGT
Quadrant I: T2+, G+
VD = 12 V, RL = 20 Ω, TJ = 25°C
–
30
mA
Quadrant II: T2+, G–
–
30
mA
Quadrant III: T2–, G–
–
30
mA
Gate Non-trigger Voltage
VGD
VD = VDRM × 0.5, RL = 4 kΩ, TJ = 125°C
0.2
–
V
Critical Rising Rate of
Off-State Voltage during
Commutation*
(dv/dt)c
TJ = 125°C, VD = 400 V, (di/dt)c = –8 A/ms, ITP = 2 A
10
–
V/
μs
*Where ITP is the peak current through T2 to T1.
T1
T2
R
GREF =
∞
G
T1 [ – ]
T2 [ + ]
G [ – ]
T1 [ – ]
T2 [ + ]
G [ + ]
T1 [ + ]
T2 [ – ]
G [ – ]
T1 [ + ]
T2 [ – ]
G [ + ]
Quadrant II
Quadrant I
+IGT
+T2
–T2
Polarities referenced to T1
–IGT
Quadrant III
Quadrant IV
Test Circuit 1
Gate Trigger Characteristics
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
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